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Method for producing CdS/CdTe solar cell by magnetron sputtering method

A solar cell, magnetron sputtering technology, applied in sputtering plating, circuits, electrical components, etc., can solve the problems of cumbersome, complex process, high cost, and achieve large product area, high film quality and low cost. Effect

Active Publication Date: 2010-02-03
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the process is complex, cumbersome and costly

Method used

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  • Method for producing CdS/CdTe solar cell by magnetron sputtering method
  • Method for producing CdS/CdTe solar cell by magnetron sputtering method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Formation of CdS / CdTe film

[0036] Put the cleaned and photoetched conductive glass workpiece into the fixture, start the conveying system to send the workpiece into the feeding bin 1, close the bin door, start the vacuum system, and pump to 2.5×10 -2 Pa, start the infrared heater to make the temperature of the workpiece reach 230°C, fill it with argon to 0.5×10 0 Pa, open the door between the preparation bin and the CdS coating bin 2, the workpiece is sent into the CdS bin by the conveying system, close the door between the feeding bin and the CdS coating bin, CdS is plated by magnetron sputtering, and the current Adjust to 4mA / cm 2 , the distance between the target and the workpiece is controlled at 100mm, and the time is 7min, so that the CdS film thickness is 70nm, stop sputtering, open the door of CdS and the transition chamber, start the conveying system to send the workpiece into the transition chamber 3 and fill it with argon, adjust the air pressure to 1...

Embodiment 2

[0044] (1) Formation of CdS / CdTe film

[0045] Put the cleaned and photolithographically completed conductive glass workpiece into the fixture, start the conveying system to send the workpiece into the feeding bin 1, close the bin door, start the vacuum system, and pump to 5.5×10 -2 Pa, start the infrared heater to make the temperature of the workpiece reach 250°C, fill it with argon to 2.2×10 0 Pa, open the door between the preparation bin and the CdS coating bin 2, the workpiece is sent into the CdS bin by the conveying system, close the door between the feeding bin and the CdS coating bin, CdS is plated by magnetron sputtering, and the current Adjust to 10mA / cm 2 , the distance between the target and the workpiece is controlled at 220mm, and the time is 10min, so that the CdS film thickness is 120nm, stop sputtering, open the door of CdS and the transition chamber, start the conveying system to send the workpiece into the transition chamber 3 fill with argon, adjust the ai...

Embodiment 3

[0053] (1) Formation of CdS / CdTe film

[0054] Put the cleaned and photoetched conductive glass workpiece into the fixture, start the conveying system to send the workpiece into the feeding bin 1, close the bin door, start the vacuum system, and pump to 3.5×10 -2 Pa, start the infrared heater to make the temperature of the workpiece reach 240°C, fill it with argon to 1.2×10 0 Pa, open the door between the preparation bin and the CdS coating bin 2, the workpiece is sent into the CdS bin by the conveying system, close the door between the feeding bin and the CdS coating bin, CdS is plated by magnetron sputtering, and the current Adjust to 8mA / cm 2 , the distance between the target and the workpiece is controlled at 150mm, and the time is 8min, so that the CdS film thickness is 100nm, stop sputtering, open the door of CdS and the transition chamber, start the conveying system to send the workpiece into the transition chamber 3 and fill it with argon, adjust the air pressure to ...

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Abstract

The invention discloses a method for producing a CdS / CdTe solar cell by a magnetron sputtering method, which is characterized by comprising three parts of forming a CdS / CdTe film, thermally processingCdC12 and making a back electrode. CdS, CdTe, CdC12, ZnTe:Cu and Ni are respectively plated on a clean and photoetched conductive glass workpiece via control of voltage, power source, air pressure and distance and control of the quality of the film, so as to form an integral cell. The performance test is as follows: a small area of 0.05 cm<2>, a short circuit current of 27mA / cm<2>, an open circuit voltage of 0.82V per monocle, a filling factor of 72 percent and a conversion efficiency of 14.2 percent; a large area of 200cm<2L (20*100 cm), a short circuit current of 21mA / cm<2>, an open circuitvoltage of 0.63V per monocle, a filling factor of 66 percent and a conversion efficiency of 8 percent.

Description

technical field [0001] The invention relates to a method for producing a CdS / CdTe solar cell by a magnetron sputtering method, and belongs to the field of solar cell preparation. Background technique [0002] Compound semiconductor coated solar cells are developing rapidly as a new energy material. CdS / CdTe polycrystalline coated solar cells have the advantages of low cost, stable performance, and simple process. At the same time, it also has the basic characteristics of polycrystalline coating compound semiconductors and heterojunction devices, and is one of the most promising solar cells at present. [0003] The preparation methods of CdS / CdTe solar cells include near-space sublimation, electrodeposition, molecular beam epitaxy, physical vapor deposition, and chemical water-soluble methods. At present, near-space sublimation is mostly used, which has certain advantages, but there are also some Disadvantages, such as high energy consumption, high substrate temperature, and...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 侯仁义
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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