Preparation method of silicon carbide nanomaterial

Abstract

The invention belongs to the field of silicon carbide nanomaterials, and particularly relates to a preparation method of a silicon carbide nanomaterial. The method comprises the steps of mixing resorcinol, formaldehyde, deionized water and sodium carbonate according to a certain molar ratio to prepare resorcinol-formaldehyde sol; mixing tetraethoxysilane, ethanol, deionized water and hydrochloric acid according to a certain molar ratio to prepare silicon dioxide sol; mixing the resorcinol-formaldehyde sol with the silicon dioxide sol according to a certain mass ratio to prepare resorcinol-formaldehyde / silicon dioxide composite aerogel; grinding resorcinol-formaldehyde / silicon dioxide composite aerogel powder and cobalt nitrate according to a certain ratio to obtain an un-purified sample; and removing carbon and silicon dioxide from the un-purified sample to prepare a beta-silicon carbide nanomaterial. Through the preparation method, the problems that a carbon source and a silicon source are difficult to mix evenly, the raw material utilization rate is low and the yield is low in the process of preparing the silicon carbide nanomaterial are solved.

Description

technical field [0001] The invention belongs to the field of silicon carbide nanomaterials, in particular to a preparation method of silicon carbide nanomaterials. Background technique [0002] The first-generation elemental semiconductors represented by silicon and the second-generation compound semiconductors represented by gallium arsenide have greatly promoted the development of microelectronics and optoelectronics technology, but due to the limitations of the material itself, its device applications are also tending to the limit . Compared with traditional semiconductor materials such as silicon and gallium arsenide, silicon carbide has many excellent characteristics, such as wide band gap, high thermal conductivity, high critical breakdown electric field, high electron saturation migration rate, oxidation resistance, corrosion resistance and high temperature resistance. Strong and so on. Therefore, the third-generation semiconductor represented by silicon carbide has...

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Problems solved by technology

[0004] The embodiment of the present invention provides a method for preparing silicon carbide nanomaterials, which solves the problems of difficult mixing of carbon source and silicon source, low raw material utilization rate, and low yield in the process of preparing silicon carbide nanomaterials. Simple, low production temperature, no pollution to the environment, low energy consumption, easy large-scale production, high product purity, good crystallinity, and uniform thickness