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Preparation method of ZnS/ZnSe composite infrared transmission material

An infrared transmission, zinc selenide technology, applied in the field of chemical vapor deposition CVD, can solve the problems of increasing process difficulty and risk, strict exhaust gas treatment, increasing production cost, etc., achieving good application prospects, low price, and reducing production costs. Effect

Active Publication Date: 2011-10-26
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the methods for preparing ZnS / ZnSe infrared transparent materials in the above articles are all chemical vapor deposition, and the raw materials are all H 2 S and H 2 Se gas, while H 2 S and H 2 Se is a highly toxic gas, which is extremely harmful to the human body, and the exhaust gas treatment is strict, which increases the difficulty and risk of the process. At the same time, the H 2 SH 2 Se gas is expensive and therefore also increases the production cost of the final product

Method used

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  • Preparation method of ZnS/ZnSe composite infrared transmission material
  • Preparation method of ZnS/ZnSe composite infrared transmission material
  • Preparation method of ZnS/ZnSe composite infrared transmission material

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Polish a φ40mm×5mm ZnSe substrate. The polished substrate is ultrasonically treated with alcohol for 15 minutes, dried with cotton wool, placed in a muffle furnace, and kept at 200°C for 12 hours; then plasma cleaning is performed to obtain a clean and active ZnSe substrate. surface, to ensure the bonding force between the two layers; put the plasma-cleaned ZnSe substrate into the growth mold, and then put it into the upper half of the deposition chamber at a certain position; put the zinc and sulfur raw materials into their respective crucibles, Cover the sealing cover of the deposition furnace, start the vacuum system, pump out the air in the furnace, then raise the temperature of the deposition chamber to 560°C, raise the temperature of the zinc crucible to 500°C, and raise the temperature of the sulfur crucible after the zinc crucible starts to heat up for 2 hours to 300°C; the flow rate of argon gas in the zinc crucible: the flow rate of argon gas in the sulfur cruc...

Embodiment 2

[0028] Other conditions and operations are the same as in Example 1, only the temperature and pressure of the deposition chamber and the deposition time are changed: the temperature of the deposition chamber is controlled at 600°C, the pressure of the entire system is controlled at 520±20Pa, the temperature of the deposition chamber is kept constant during the growth process, and the deposition The zone temperature is controlled at 600°C, and the entire deposition process lasts for 50 hours from the gas feeding. The overall thickness of the ZnS / ZnSe composite material was measured to be 6.30 mm, and the thickness of the ZnS deposition layer was 1.30 mm.

Embodiment 3

[0030] Other conditions and operations are the same as Case 1. Only change the temperature and pressure of the deposition chamber and the deposition time:

[0031] The temperature of the deposition chamber is controlled at 700°C, the pressure of the entire system is controlled at 700±20Pa, the temperature of the deposition chamber is kept constant during the growth process, the temperature of the deposition area is controlled at 690°C, and the entire deposition process lasts for 50 hours from the start of gas injection. The overall thickness of the ZnS / ZnSe composite was measured to be 6.40 mm, and the thickness of the ZnS deposition layer was 1.40 mm.

[0032] To sum up, the key issues in the preparation of ZnS / ZnSe composites by zinc and sulfur solid-phase elemental reaction mode chemical vapor deposition are how to prepare ZnS / ZnSe composites with a good interface between the two phases, and how to prepare the composites completely from the growth How to eliminate the resi...

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Abstract

The invention discloses a preparation method of ZnS / ZnSe composite infrared transmission material, wherein ZnS is deposited on a ZnSe substrate in a chemical vapor deposition furnace provided with a vacuum heating system by adopting a chemical vapor deposition method. The preparation method is characterized by comprising the following steps: directly and respectively heating in the deposition furnace to sublimate and generate Zn vapor and S vapor, carrying out gaseous phase reaction in a deposition chamber to deposit ZnS, carrying out surface treatments of polishing, thermal treatment and plasma cleaning on the ZnSe substrate; putting the treated ZnSe substrate onto a growth mould, then putting the growth mould on a definitive position at the upper half part of the deposition chamber, andcarrying out the deposition; respectively controlling the temperature and the pressure of the deposition chamber of 560-700 DEG C and 300-720Pa, controlling the temperature of a zinc crucible in the deposition period of 500 DEG C and the temperature of a sulfur crucible of 300 DEG C, using hydrogen and argon as carrier gases, arranging a circular hole at the ZnSe substrate from the rear part of the mould so as to take the product out completely and rapidly. By adopting the method, a layer of CVDZnS product with the thickness more than 1mm is deposited on ZnSe, the light transmission waveband of the product is 0.4-12Mum, and the product is firm to be combined and has wide application prospects.

Description

technical field [0001] The present invention relates to the technical field of chemical vapor deposition CVD, is to utilize Zn, sulfur S elemental solid phase sublimation reaction mode on chemical vapor deposition zinc selenide CVDZnSe substrate, chemical vapor deposition prepares zinc sulfide / zinc selenide (hereinafter referred to as ZnS / ZnSe ) composite infrared window material is a preparation method of ZnS / ZnSe composite infrared transmission material. Background technique [0002] In recent years, as the requirements for the spectral band of lasers, forward-looking infrared sensors, CCD cameras and image intensifiers have been increased to 0.4-12 μm full-spectrum bands, and applications such as infrared guidance require infrared materials not only to have excellent optical properties , but also have good mechanical properties. ZnSe is a material with high permeability in the infrared region, and its absorption coefficient is small, which does not significantly reduce t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/30C30B25/18C30B29/48G02B1/10
Inventor 钱纁崔洪梅滕祥红肖红涛田鸿昌张旭许宁于波
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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