Preparation method of single crystal silicon carbide special materials

A technology of single crystal silicon carbide and silicon carbide, which is applied to the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth, etc., which can solve the problems of high cost, the purity of raw materials cannot reach the growth crystal, and it is not suitable for industrial production. , to achieve the effect of saving resources and production costs

Active Publication Date: 2011-05-25
JIANGSU LEYUAN MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of the production process, the purity of the raw material after purification still cannot meet the requirements for growing crystals
High-purity SiC raw materials are obtained by CVD or sintering semiconductors with extremely pure Si and C. Although its purity is higher, it also brings high costs and is not suitable for industrial production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1. A method for preparing a special material for single crystal silicon carbide, the steps are as follows:

[0032] (1) Select silicon carbide with a particle size not greater than 10 meshes as a raw material, and wash the raw material with pure water until the water is clear;

[0033] (2) Put the washed silicon carbide directly into the capped capacity, place 8-Kg silicon carbide in every 10L capacity of the capped capacity, then add pure water to the capped capacity to cover the surface of the silicon carbide, and then slowly add For flaky sodium hydroxide with a purity greater than 98%, stir so that the concentration of the sodium hydroxide solution in the capped capacity reaches 8%; put the capped capacity in a water bath, react in a water bath at 80°C for 6 hours, and stir for 2 hours every 1 hour. times; then use pure water to wash the silicon carbide after the water bath reaction to neutrality with pure water;

[0034] (3) Put the washed silicon carbide...

Embodiment 2

[0038] Example 2. A method for preparing a special material for single crystal silicon carbide, the steps are as follows:

[0039] (1) Select silicon carbide with a particle size not greater than 10 meshes as a raw material, and wash the raw material with pure water until the water is clear;

[0040] (2) Put the washed silicon carbide directly into the capped capacity, place 12Kg of silicon carbide in every 10L capacity of the capped capacity, then add pure water to the capped capacity to cover the surface of the silicon carbide, and then slowly add 98% flaky sodium hydroxide, stir, so that the concentration of sodium hydroxide solution in the capacity with a cover reaches 10%; put the capacity with a cover into a water bath, react in a water bath at 90°C for 10 hours, and stir once every 3 hours; Then use pure water to wash the silicon carbide after the water bath reaction with pure water to neutrality;

[0041] (3) Put the washed silicon carbide into the capped capacity ag...

Embodiment 3

[0045] Example 3. A method for preparing a special material for single crystal silicon carbide, the steps are as follows:

[0046] (1) Select silicon carbide with a particle size not greater than 10 meshes as a raw material, and wash the raw material with pure water until the water is clear;

[0047] (2) Put the washed silicon carbide directly into the covered capacity, place 10Kg of silicon carbide in every 10L of covered capacity, then add pure water to the covered capacity to cover the surface of the silicon carbide, and then slowly add 98% flaky sodium hydroxide, stir, so that the concentration of sodium hydroxide solution in the capacity with a cover reaches 9%; put the capacity with a cover in a water bath, react in a water bath at 85°C for 8 hours, and stir once every 1 hour; Then use pure water to wash the silicon carbide after the water bath reaction with pure water to neutrality;

[0048] (3) Put the washed silicon carbide into the capped capacity again, place 10Kg...

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Abstract

The invention relates to a preparation method of signal crystal silicon carbide special materials, which is characterized in that the prepration method comprises the steps of selecting silicon carbide of not greater than 10 meshes as raw materials, and using purified water for carrying out washing with water on the raw materials till that the water is clear; then sequentially carrying out the washing with sodium hydroxide, the washing with sulfuric acid, the washing with aqua regia and the washing with hydrofluoric acid on the silicon carbide after the washing with the water, then further washing with the water till neutrality, drying, and then arranging the silicon carbide in a heating device for heating and calcination, thereby obtaining the signal crystal silicon carbide special materials. The method can effectively remove dust, oil, carbon, silicon, silicon dioxide, Cu, Fe, Al, a small amount of inert metals and free carbon and other impurities in the silicon carbide raw materials, and all the steps complement each other, thereby leading the purity of finished products of the signal crystal silicon carbide special materials to achieve 99.99% and achieving the using requirements on a third generation of semiconductor materials.

Description

technical field [0001] The invention relates to a method for producing silicon carbide, in particular to a method for preparing a special material for single crystal silicon carbide. Background technique [0002] Silicon carbide crystal is the latest technology product of silicon carbide application at present. It is called the third-generation semiconductor material, also known as wide bandgap semiconductor material, high-temperature semiconductor material, etc. It is currently a research hotspot in the world. They have the characteristics of high thermal conductivity, high critical breakdown electric field and low dielectric constant, and become the preferred materials for semiconductor devices with high temperature resistance, high power, high voltage resistance and radiation resistance. Silicon carbide crystals are used as the basis of various electronic components. Chips, silicon carbide semiconductors have broad prospects for development. The purity of the raw materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36C30B29/36
Inventor 朱立起胡顺武张顺军顾小方
Owner JIANGSU LEYUAN MATERIAL
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