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Method for preparing nano silicon by pulsed laser deposition

A pulsed laser deposition, nano-silicon technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., to achieve the effect of good photoluminescence characteristics and increase application prospects

Active Publication Date: 2011-06-22
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Method for preparing nano silicon by pulsed laser deposition
  • Method for preparing nano silicon by pulsed laser deposition
  • Method for preparing nano silicon by pulsed laser deposition

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Effect test

Embodiment 1

[0035] A method for preparing nano-silicon by pulsed laser deposition, which is realized by using pulsed laser deposition equipment in the following steps:

[0036] (1) figure 1 It is a schematic diagram of the nano-silicon structure prepared by pulsed laser deposition, figure 1 (a) is a schematic diagram of planar high-purity silicon target deposition, figure 1 (b) is a schematic diagram of the deposition of arc-shaped high-purity silicon targets. Using ordinary planar silicon targets, the silicon nanoparticles produced by laser ablation are seriously agglomerated, so arc-shaped silicon targets are used.

[0037] select figure 1 (b) The curved silicon target shown in (b) has an arc of about 0.3 rad and a target diameter of 60 mm. The silicon target material is high-purity polysilicon. To clean the high-purity polysilicon target, the steps are to use toluene, ethanol, and acetone to ultrasonically clean the target. Clean for 10 minutes, and repeat the above cleaning steps ...

Embodiment 2

[0047] A method for preparing nano-silicon by pulsed laser deposition, which is realized by using pulsed laser deposition equipment in the following steps:

[0048] (1) selection figure 1 (b) The curved silicon target shown in (b), the arc of the silicon target is about 0.35rad, and the target diameter is 60mm. The silicon target material is high-purity polysilicon. To clean the high-purity polysilicon target, the steps are to use toluene, ethanol, and acetone in order to ultrasonically clean the silicon target. Clean for 10 minutes, and repeat the above cleaning steps 5 times; use the standard RCA silicon wafer cleaning process to clean the silicon single crystal substrate. 2. SC-1 is H 2 o 2 and NH 4 Alkaline solution of OH, SC-2 is H 2 o 2 Acidic solution with HCl, DHF is a mixture of HF and pure water, also called diluted hydrofluoric acid DHF (diluted HF);

[0049] (2) The silicon target is loaded into the rotating target position for pulsed laser deposition;

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Embodiment 3

[0059] A method for preparing nano-silicon by pulsed laser deposition, which is realized by using pulsed laser deposition equipment in the following steps:

[0060] (1) selection figure 1 (b) The curved silicon target shown in (b), the arc of the silicon target is about 0.35rad, and the target diameter is 60mm. The silicon target material is high-purity polysilicon. To clean the high-purity polysilicon target, the steps are to use toluene, ethanol, and acetone in order to ultrasonically clean the silicon target. Clean for 10 minutes, and repeat the above cleaning steps 5 times; use the standard RCA silicon wafer cleaning process to clean the silicon single crystal substrate. 2. SC-1 is H 2 o 2 and NH 4 Alkaline solution of OH, SC-2 is H 2 o 2 Acidic solution with HCl, DHF is a mixture of HF and pure water, also called diluted hydrofluoric acid DHF (diluted HF);

[0061] (2) The silicon target is loaded into the rotating target position for pulsed laser deposition;

[0...

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Abstract

The invention discloses a method for preparing nano silicon by pulsed laser deposition, belonging to the technical field of nano silicon material preparation. The method comprises the following steps: firstly, washing and fixing a cambered surface silicon target and a substrate; introducing inert buffer gas after vacuum-pumping; adjusting the temperature of the substrate; ablating the silicon target by a KrF quasimolecule laser; discharging residual gas in a vacuum chamber after completing laser ablation; introducing insert gas to achieve normal pressure; collecting nano silicon particles on the substrate; taking out and placing the nano silicon particles in a sealing box of the inert gas for storing. By selecting proper silicon target shape, deposition distance, buffer gas pressure and substrate temperature, the dimensions and the dispersity of the nano silicon are adjusted. The invention can directly obtain nano silicon particles with controllable dimensions, even dispersity and high surface density on a semiconductor monocrystal, can be directly used for the assembling of photoelectric devices, thus significantly expanding application prospects of the nano silicon particles; inaddition, the nano silicon particles with the diameter being less than 10nm prepared by the invention have a favorable photoluminescence property.

Description

technical field [0001] The invention belongs to the technical field of silicon nano material preparation, in particular to a method for preparing nano silicon by pulse laser deposition. Background technique [0002] Since 1990, British scientist Canham first observed the room temperature visible light emission phenomenon of nanoporous Si, which opened up a new direction of Si-based optoelectronics research. Over the past decade, with the joint efforts of material and device physicists, various Si-based low-dimensional nanomaterials have made gratifying progress in the application of optoelectronic devices. These materials mainly include photoluminescence (PL) and electroluminescence (EL) zero-dimensional Si-based nanoparticles, waveguide structures that allow light to be guided and decomposed, Si nanocrystals with photonic band gap characteristics, etc. Application devices mainly include diodes that generate electrons and holes by Si-based nanoparticles under illumination o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/14
Inventor 王磊杜军屠海令朱世伟
Owner GRIMAT ENG INST CO LTD