Transparent conductive film of metal silver/metal oxide and preparation method thereof

A transparent conductive film and oxide technology, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, metal material coating process, etc., can solve the problems of low industrial production efficiency, increased material consumption, and high film manufacturing cost. Achieve the effects of fast production speed, short coating time and material saving

Inactive Publication Date: 2010-04-21
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thickness of zinc aluminum oxide must exceed 400 nanometers (usually the thickness of indium tin oxide is only more than 100 nanometers), its electrical properties are relatively good, and the pr

Method used

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  • Transparent conductive film of metal silver/metal oxide and preparation method thereof
  • Transparent conductive film of metal silver/metal oxide and preparation method thereof
  • Transparent conductive film of metal silver/metal oxide and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0019] It includes a base layer 4; a thin film buffer layer 3 arranged on the base layer 4; a thin film conductive layer 2 attached to the buffer layer 3; a transparent conductive thin film protective layer 1 attached to the thin film conductive layer 2. Among them: the base material is quartz; the buffer layer material is silicon oxide film, the film conductive layer material is silver, and the transparent conductive film protective layer material is aluminum-doped zinc oxide.

[0020] 1. Preparation of thin film buffer layer

[0021] A silicon dioxide film is deposited on a quartz substrate by DC reactive magnetron sputtering, the film thickness is 10 nanometers, the sputtering target material is metal silicon (purity is 99.99%), the flow rate of argon is 200 cubic centimeters per minute, oxygen The flow rate is 100 cubic centimeters per minute, the sputtering power is 2000 watts, and the sputtering pressure is 0.9 Pa.

[0022] 2. Preparation of thin film conductive layer s...

Embodiment 2

[0027] It includes a base layer 4; a thin film buffer layer 3 arranged on the substrate 4; a thin film conductive layer 2 attached to the buffer layer 3; a transparent conductive thin film protective layer 1 attached to the thin film conductive layer 2. Wherein: the material of the base layer is glass; the material of the buffer layer is silicon oxide film, the material of the conductive layer of the film is silver, and the material of the film protective layer is tin-doped indium oxide film.

[0028] 1. Preparation of thin film buffer layer

[0029] A silicon dioxide film is deposited on a glass substrate by DC reactive magnetron sputtering, the film thickness is 20 nanometers, the sputtering target material is metal silicon (purity is 99.99%), the flow rate of argon is 200 cubic centimeters per minute, oxygen The flow rate is 120 cubic centimeters per minute, the sputtering power is 3000 watts, and the sputtering pressure is 0.9 Pa.

[0030] 2. Preparation of thin film cond...

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Abstract

The invention relates to a transparent conductive film consisting of metal silver/metal oxide and a preparation method thereof. The transparent conductive film consists of a substrate, a film buffer layer, a film conductive layer and a transparent conductive film protective layer which are arranged layer by layer from bottom to top. The conductive layer is a metal silver film of which the thickness is between 3 and 10 nanometers; the thickness of the film buffer layer is between 10 and 30 nanometers; and the thickness of the transparent conductive film protective layer is between 20 and 50 nanometers. In the preparation method, the magnetron sputtering coating technology is adopted, a conveyor belt drives the substrate to move in vacuum cavities, and the buffer layer, the conductive layer and the transparent conductive film protective layer are coated layer by layer on the substrate layer in turn in three vacuum cavities respectively. The film prepared by the method has the optical transmittance in a visible light area over 80 percent, and the surface resistance less than 10 ohms. The thicknesses of the conductive layer and the transparent conductive film protective layer are all thin, materials are saved, the required coating time is short, and high production efficiency is achieved in industrial mass production.

Description

technical field [0001] The invention relates to a transparent conductive film and a preparation method thereof, in particular to a transparent conductive film composed of a metal silver layer and a metal oxide layer and a preparation method thereof. Background technique [0002] Transparent conductive film is a film with high optical transparency and good conductivity, which has been widely used as electrode materials for various display devices and optoelectronic devices such as solar cells. The currently commonly used transparent conductive film materials are indium tin oxide (tin-doped indium oxide) and zinc aluminum oxide (aluminum-doped zinc oxide); wherein, indium tin oxide is the most widely used due to its excellent performance and easy preparation, but, Indium is a rare metal. With the extensive use of indium oxide, the price of indium continues to rise, so it is urgent to find new transparent conductive materials to replace indium oxide. Zinc is abundant in nature...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B13/00C23C14/06C23C14/35B32B9/04
Inventor 赖发春程正勤裴瑜黄志高林丽梅
Owner FUJIAN NORMAL UNIV
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