Phase-change temperature testing system

Abstract

The invention discloses a phase-change temperature testing system, which has the following structure that: a light-through hole is reserved on a cover plate of a heating furnace in which a furnace chamber is arranged; a sample holder is positioned in the furnace chamber and is positioned under the light-through hole; a laser and a photoelectric detector are arranged above the light-through hole; and the photoelectric detector is positioned on a light path of a sample to be tested for reflecting laser beams. The phase-change temperature testing system can be additionally provided with a signal amplification and acquisition circuit, a temperature control sensing circuit and a data processor. The system has relatively higher testing sensitivity, can test the phase-change temperature of a thin film thinner than 1 nm, directly test the phase-change temperature of a thin film sample without damage to the sample and obtain more material thermodynamic parameters through temperature-change measurement at different heating rates, and has the characteristics of simple operation, low cost and relatively higher testing reliability.

Description

technical field [0001] The invention belongs to the thin film performance testing technology, and in particular relates to a test system for the phase transition temperature of thin film materials. The system can measure the crystallization temperature of the thin film material, the phase transition temperature and the melting temperature between different structural phases in the crystal state. Background technique [0002] At present, phase change materials mainly based on chalcogenides are widely used in information storage, energy storage, sensors, logic devices, artificial neural networks and other fields. Taking phase change memory (PCRAM) as an example, it uses the thermal effect of electric pulses to reversibly change phase change materials (mainly chalcogenide compounds) between crystalline and amorphous states, and the huge resistance value of the material in the two states The difference is to store data, in which the crystalline state is a low-resistance state, a...

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Problems solved by technology

[0004] The commonly used means of measuring the phase transition temperature of materials mainly include differential thermal analyzer (DSC) and variable temperature XRD, among which the former belongs to destructive measurement, and the thin film sample must be scraped into powder, which will inevitably destroy the film layer structure, resulting in measurement errors. Inaccurate. In addition, due to the limitation of its sensitivity, the sample mass is generally required to be greater than a few milligrams, and thin film samples cannot be measured at all; while the measurement accuracy of variable temperature XRD is limited, and the thermal expansion of the crystal at high temperature will cause large errors.

The phase change temperature test device shown in the Chinese invention patent "Phase Change Temperature Test Device" (publication number CN1253286, publication date 2000.05.17) can only be used to measure samples with better light transmission, and most thin film materials especially The light transmittance of thin film phase change materials is very low, and its light transmittance changes sharply with the change of film thickness, which greatly limits its application range

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