Method for growing AlInN monocrystal epitaxial film

Abstract

The invention discloses a method which adopts mixed gas of nitrogen and hydrogen as carrier gas to grow high-quality AlInN monocrystal epitaxial film. The method comprises the following steps: selecting a substrate; putting the substrate into a metallorganics chemical vapor deposition system; heating to the growth temperature; meanwhile, introducing TMIn, TMAl, NH3, N2 and a proper quantity of H2; and growing the AlInN monocrystal epitaxial film. The invention can improve AlInN crystallization quality, improves surface appearance and improves surface evenness.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing high-quality AlInN single crystal epitaxial films. Background technique [0002] The bandgap width of AlN is 6.2eV, and that of InN is 0.7eV, so the bandgap width of AlInN has a large adjustable range. If it is used as the active layer of a nitride semiconductor optoelectronic device, its light-emitting wavelength can cover the range from infrared to ultraviolet; in addition, the lattice constant of AlInN also has a large adjustable range, so that it can be compared with other epitaxial layers. Good lattice matching, such as AlInN / GaN, AlInN / InGaN, and AlInN / AlGaN, can especially make a heterostructure that matches the GaN lattice, which can reduce defects or cracks caused by lattice mismatch. [0003] Recently, AlInN / GaN and AlInN / AlGaN heterostructures have been successfully applied to Bragg reflectors (DBRs). Before the mid-1990s, few people studi...

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Problems solved by technology

However, since the growth of AlN materials requires a relatively high temperature, and at the same time the V / III ratio cannot be large, and the ammonia gas flow rate is low, while the growth of InN materials is just the opposite, requiring a low growth temperature, a large V / III ratio, and a high ammonia gas flow rate, so The growth conditions of AlN and InN materials are exactly the two extremes of group III nitride materials, resulting in a relatively narrow growth window of AlInN; in addition, due to the differences in lattice parameters, bond lengths and thermal stability of AlN and InN Compared with InGaN, AlInN is more prone to phase separation, resulting in uneven composition

[0006] In addition, at a lower growth temperature, the migration ability of surface adatoms is relatively low, especially the adsorbed Al atoms, and it is difficult to grow high-quality AlInN single crystal epitaxial films.

Due to the existence of these problems, the crystal quality of the AlInN single crystal epitaxial film is not very high, which affects its further application.

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