Protective film forming method and apparatus

A technology of covering device and film, which is applied in the manufacture of devices, electrical components, and semiconductor/solid-state devices that apply liquid to the surface. The amount of use, good affinity, and the effect of increasing the ratio

A technology of covering device and film, which is applied in the manufacture of devices, electrical components, and semiconductor/solid-state devices that apply liquid to the surface. The amount of use, good affinity, and the effect of increasing the ratio

CN101740419AActive Publication Date: 2010-06-16DISCO CORP
2 Cites 10 Cited by

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Protective film forming method and apparatus
  • Protective film forming method and apparatus
  • Protective film forming method and apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Hereinafter, preferred embodiments of the protective film covering method and protective film covering apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0033] exist figure 1 , shows a perspective view of a laser processing machine equipped with a protective film covering device according to the present invention.

[0034] figure 1 The laser processing machine shown has an approximately cuboid housing 2 . In the casing 2 of this device, a chuck table 3 as a workpiece holding unit for holding a workpiece is disposed so as to be movable in a direction indicated by an arrow X which is a machining feeding direction. The chuck table 3 has a suction chuck support base 31 and a suction chuck 32 mounted on the suction chuck support base 31, and sucks, for example, a disc-shaped semiconductor to be processed by a suction unit not shown. The wafer is held on the surface of the suction chuck 32 , that is, the m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A protective film forming method for forming a protective film of resin on a work surface of a wafer. The protective film forming method includes a wafer holding step of holding the wafer on a spinner table in the condition where the work surface is oriented upward, a spray coating step of spraying first liquid resin onto the work surface of the wafer as rotating the spinner table at a first rotational speed after performing the wafer holding step, a liquid resin supplying step of dropping a predetermined amount of second liquid resin onto a central area of the work surface of the wafer as rotating the spinner table at a second rotational speed lower than the first rotational speed after performing the spray coating step, and a spin coating step of rotating the spinner table at a third rotational speed higher than the first rotational speed after performing the liquid resin supplying step to thereby spread the second liquid resin dropped onto the central area of the work surface of the wafer, thus forming the protective film on the work surface of the wafer.

Description

technical field [0001] The present invention relates to a method and a device for covering a resin protective film on the surface of a wafer such as a semiconductor wafer or an optical device wafer. Background technique [0002] In the manufacturing process of a semiconductor device, a plurality of regions are divided on the surface of a generally disc-shaped semiconductor wafer by dividing lines called streets arranged in a grid pattern, and IC (integrated wafers) are formed in the divided regions. circuit: integrated circuit), LSI (large-scale integration: large-scale integrated circuit), liquid crystal driver, flash memory and other devices. Then, the region where the devices are formed is divided by cutting the semiconductor wafer along the lanes, thereby manufacturing individual devices. Alternatively, the surface of the optical device wafer is divided into a plurality of regions by grid-shaped streets on the surface of a sapphire substrate or the like, and optical dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
16 Jun 2010
Publication
CN101740419A
IPC
H01L21/56; H01L21/00; B05D1/36
CPC
H01L21/68728; H01L21/68785; H01L21/6715
Inventors
北原信康; 远藤智章