ZnO nanosphere-based GaN-based light emitting diode surface roughening method
A technology of light-emitting diodes and surface roughening, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced light-emitting area, reduced luminous efficiency, and unstable process. It is easy to achieve size, improve extraction efficiency, and simple process Effect
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[0028] The present invention will be further described below in conjunction with the drawings and embodiments.
[0029] figure 2 Mark description in: 1-P pressure solder joint, 2-transparent P-type electrode, 3-P-type GaN material, 4-quantum well, 5-N-type GaN material, 6-substrate, 7-nano-ZnO roughened layer , 8-N pressure welding point.
[0030] The GaN-based light-emitting diode whose surface is roughened with ZnO nanospheres sequentially includes: a substrate, a GaN-based epitaxial layer, a transparent electrode for ohmic contact on a P-type material, ZnO nanospheres, and P and N pressure bonding points.
[0031] Wherein, the substrate can be sapphire, silicon carbide, or silicon.
[0032] Wherein, the GaN-based epitaxial layer includes N-type materials, quantum wells, and P-type materials.
[0033] Wherein, the P-type transparent electrode can be a metal material or an oxide material, the metal material is: Pd, Au or NiAu; the oxide material is ZnO, NiO mgO, In2O3, TiO2 or indiu...
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