Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Photoresist detergent composition

A cleaning agent and composition technology, applied in the direction of photosensitive material processing, etc., can solve the problems of insufficient cleaning ability of thick film photoresist, strong corrosiveness of semiconductor wafer patterns and substrates, and harmful environment, and achieve the suppression of corrosion dark spots, Conducive to environmental protection and anti-corrosion effect

Inactive Publication Date: 2010-06-23
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF7 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The technical problem to be solved by the present invention is to provide a photoresist cleaning agent for the defects that the existing photoresist cleaning agent has insufficient cleaning ability for thick film photoresist, is highly corrosive to semiconductor wafer patterns and substrates, and is harmful to the environment. Photoresist cleaning agent composition with strong resist cleaning ability, low corrosion to semiconductor wafer patterns and substrates, and environmental protection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist detergent composition
  • Photoresist detergent composition
  • Photoresist detergent composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~26

[0043] Table 1 shows the formulations of the photoresist cleaning composition examples 1 to 26 of the present invention. According to the components listed in Table 1 and their contents, simply mix them uniformly to prepare the cleaning compositions.

[0044] Table 1 Photoresist cleaning agent composition embodiment 1~26 of the present invention

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

[0051] The beneficial effects of the present invention will be further described below through preferred effect embodiments of the present invention.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a photoresist detergent composition, which comprises quaternary ammonium hydroxides, water, aromatic alcohol, dimethyl sulfoxide, and at least one corrosion inhibitor selecting from citric acid, tricaprylyl citrate and citrate. The photoresist detergent composition can also comprise a polar organic cosolvent, a surface active agent and / or other corrosion inhibitors. The photoresist detergent composition can remove the photoresist (particuarly thick film negative photoresist) with the thickness of over 20 mu m on the metals, metal alloys or dielectric medium substrates, and other etching residues; and meanwhile, the composition has low causticity to the metals such as aluminum, copper and the like and the nonmetallic materials such as silicon dioxide and the like, thus, the composition has good application prospect in the micro-electronics fields such as semiconductor chip cleaning, and the like.

Description

technical field [0001] The invention relates to a cleaning agent composition in a semiconductor manufacturing process, in particular to a photoresist cleaning agent composition. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist coating is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. According to the photoresist used To remove the exposed or unexposed part of the photoresist, form a photoresist pattern at the required position, and then perform plasma etching or reactive gas etching on the photoresist pattern to perform pattern transfer. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photore...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 史永涛彭洪修曹惠英
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products