Nanocable production method taking alumina as wrapping layer

Abstract

The invention discloses a nanocable production method taking alumina as a wrapping layer, which comprises the steps: firstly, placing an aluminum sheet in acid solution for anodic oxidation for 4 to 8 hours, and then placing the aluminum sheet in mixed solution of phosphoric acid and chromic acid to be immersed, then, firstly putting the aluminum sheet in the same acid solution for anodic oxidation for 6 to 10 hours with the same DC voltage, and transiently increasing DC voltage by 1.73 times or 2 times, continuing the anodic oxidation for 10 minutes, and then removing the unoxidized aluminumon the back, corroding off the alumina barrier layer on the bottom of the hole, obtaining a porous alumina template with through holes and blind holes at interval; secondly, utilizing the electron beam vapor deposition method to deposite metal films on one side of the alumina template, and then using the electrochemical deposition method to perform the electrochemical deposition of metal or semiconductor in the through hole; and finally, placing the alumina template in phosphoric acid or alkali solution to be corroded to be made into the nanocable taking alumina as the wrapping layer. The invention has better universality, not only can produce the metal core wire, but also can produce the nanocable of the semiconductor core wire.

Description

technical field [0001] The invention relates to a preparation method of a nanometer cable, in particular to a preparation method of a nanometer cable with aluminum oxide as a coating layer. Background technique [0002] Compared with silicon oxide, alumina is a material with high dielectric constant, and has broad application prospects in modern electronic devices and integrated circuits. Nanowires of metal and semiconductor materials are an indispensable and important part of modern electronics, and they can be used as wires and nanodevices in integrated circuits, respectively. For this reason, people have made various efforts in order to attach a layer of high dielectric constant insulating material on the nanowire of metal or semiconductor material, as reported in 2006, pp. 295-298 of the Journal of Crystal Growth 289, G.S.Huang, Y. "Formation mechanism of metal (copper and iron) nanowires wrapped in single alumina tubes" by Xie et al. (G.S. Huang, Y. Xie, X.L. Wu, -, L....

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Problems solved by technology

However, there are deficiencies in this preparation method. First, the quality of the nano-cable is poor, one is uneven in length, and the other is that the aluminum oxide and the nano-core wire wrapped by it are not complete. After the general straight-hole alumina template deposits nano-core wires, it is corroded with sodium hydroxide solution for a period of time, and then directly dispersed by ultrasonic waves. Most of the final products obtained are torn alumina tubes or nano-core wires, with only a small amount The complete nano-cable remains, and this method of tearing the alumina from the template substrate with ultrasonic waves will inevitably cause damage to the alumina tube and cable core wire, and it is difficult to obtain a uniform and complete nano-cable; secondly, the nano-cable The output of the nano-cable is low, which makes it extremely difficult to reduce the cost of its production. Based on the aforementioned reasons, the output of nano-cables cannot be high; again, due to the constraints of the alumina template, the thickness of the alumina tube is difficult to artificially control

Although there is also a method for preparing nano-cables with aluminum oxide as the coating layer and metal gold or metal zinc or semiconductor zinc oxide or cadmium sulfide as the nano-core wire by using the same alumina template, there are varying degrees of nano-cables. Poor quality, low output, and the defects that the thickness of alumina tube is difficult to control artificially

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