Unlock instant, AI-driven research and patent intelligence for your innovation.

BCD integration process

A process and trench technology, applied in the field of BCD integration process, can solve the problems of increasing the collector series resistance of bipolar transistors and reducing the cut-off frequency, and achieve the effect of improving performance and fewer process steps

Active Publication Date: 2012-05-23
ADVANCED SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current popular BCD process, bipolar transistors are mostly isolated by pn junctions and their electrodes are drawn out by injection and diffusion methods. The collectors not only occupy a considerable area, but also cause an increase in the series resistance of the collectors of bipolar transistors. thus lowering the cutoff frequency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • BCD integration process
  • BCD integration process
  • BCD integration process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The invention proposes a BCD integration process, which includes the process of manufacturing trench DMOS and vertical bipolar devices. For the process, the changes mainly include:

[0020] Adding a trench lithography step after the local oxidation isolation step;

[0021] For DMOS devices in the BCD integration process, the trench photolithography step uses the oxide and nitride formed in the local oxidation isolation step as a barrier layer, grows a gate oxide layer in the formed trench, and deposits polysilicon to fill the trench groove;

[0022] For the bipolar device in the BCD integration process, the trench formed in the trench photolithography step is filled with tungsten to form the collector region of the bipolar device.

[0023] Further, for DMOS devices, the process of manufacturing DMOS devices includes: forming an N-type buried layer on the substrate; growing an N-type epitaxial layer; performing local oxidation isolation; performing trench photolithogra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a BCD integration process, which is characterized by adding a groove photoetching step after a partial oxide isolation step. In regard to a DMOS device in the BCD integration process, an oxide and a nitride formed in the partial oxide isolation step are used as barrier layers in the groove photoetching step, a gate oxide layer grows in a formed groove, and a polysilicon filling groove is deposited; and in regard to a bipolar device in the BCD integration process, and tungsten is filled into the groove formed in the groove photoetching step to form a collector region ofthe bipolar device. The BCD integration process can multiply enhance the properties of the DMOS device and a bipolar transistor, furthest develops the advantages of a BCD process, and has fewer additional process steps.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, more specifically, to a BCD integration process. Background technique [0002] BCD is a monolithic integration process technology that can make bipolar transistors (Bipolar Junction Transistor), CMOS and DMOS devices on the same chip. The BCD process not only combines the advantages of high transconductance, strong load driving capability of bipolar devices, high integration and low power consumption of CMOS, but also integrates DMOS power devices with fast switching speed. Since DMOS has the characteristics of high speed and high current capability at the same time, the withstand voltage is usually high, so the power management chip manufactured by BCD process can work under high frequency, high voltage and high current, which is an ideal process for manufacturing high performance power chip . The monolithic integrated chip manufactured by the BCD process can also improve system perform...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8248
Inventor 永福龚大卫陈雪萌吕宇强
Owner ADVANCED SEMICON MFG CO LTD