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Compositions and methods for chemical-mechanical polishing of phase change materials

A phase change material and mechanical polishing technology, applied in the field of polishing composition, can solve the problems of reducing the electrical performance of PCM devices

Inactive Publication Date: 2010-06-30
CABOT MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] One disadvantage of CMP compositions for polishing phase change materials (such as GST) using oxidizing agents is that an oxide capping layer can accumulate on the surface of the PCM, which can degrade the electrical performance of the PCM device

Method used

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  • Compositions and methods for chemical-mechanical polishing of phase change materials
  • Compositions and methods for chemical-mechanical polishing of phase change materials
  • Compositions and methods for chemical-mechanical polishing of phase change materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This example illustrates the GST oxidation inhibitory activity of lysine in the presence of hydrogen peroxide.

[0031] Individual GST wafers (1 cm × 1 cm, Ge 2 Sb 2 Te 5 ; GST225) were immersed in various aqueous test solutions for about 100 seconds. The control solution had a pH of about 3 and contained about 1% by weight hydrogen peroxide in water. Other test solutions contained about 1% by weight hydrogen peroxide used with benzotriazole (BTA; about 0.1% by weight), lysine (about 1% by weight), or malonic acid (about 3% by weight). Before the wafer was dipped into the test solution, it had a shiny metallic appearance. After soaking, a brown coloration on the surface of the wafer indicated the formation of a GST oxide layer on the surface. The results of these evaluations are shown in Table 1 along with the formulations of the solutions tested. As shown by the information in Table 1, lysine effectively and substantially inhibits the formation of a GST oxide cap...

Embodiment 2

[0035] This example illustrates the GST oxidation inhibitory activity of lysine in the presence of hydrogen peroxide measured using electrochemical measurements.

[0036] GST225(Ge 2 Sb 2 Te 5 ) rotating disk electrode (1 cm in diameter) was immersed in an aqueous solution (pH about 3) containing about 1% by weight lysine and about 1% by weight hydrogen peroxide. Linear sweep voltammetry was performed and the Tafel curve ( figure 1 ). Tafel curves were also obtained by the same procedure using a substantially similar GST electrode immersed in an aqueous solution containing about 3% by weight malonic acid and about 1% by weight hydrogen peroxide at a pH of about 3 ( figure 1 ) for comparison. figure 1 The Tafel curve shows that the corrosion current of the lysine / hydrogen peroxide solution is about 0.22 mA, while the corrosion current of the malonic acid / hydrogen peroxide solution (without lysine) is about 4.5 mA. For comparative use, obtain the Tafel curve (see figure ...

Embodiment 3

[0038] This example illustrates the GST oxidation inhibitory activity of lysine as measured by x-ray photoemission spectroscopy (XPS).

[0039] An XPS experiment using depth profiling with argon sputtering was carried out to determine the oxide layer thickness measured in 0.5% by weight lysine or 3% by weight malonate Obtained by oxidation of GST225 with 1% by weight of hydrogen peroxide (pH 3) in the presence. SiO with known thickness by sputtering 2 specimen to correct for thickness measurements. The oxide thickness is obtained when the oxidation peak disappears after removing about 4 nm of the surface film. Table 2 shows the observed oxide thickness (as SiO 2 equivalent thickness gauge in angstroms). As shown by the data in Table 2, lysine reduced the oxide layer thickness by about 50% for germanium and antimony and about 66% for tellurium.

[0040] Table 2

[0041]

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Abstract

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change material (PCM), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises a particulate abrasive material in combination with lysine, an optional oxidizing agent, and an aqueous carrier therefor. CMP methods for polishing a phase change material-containing substrate utilizing the composition are also disclosed.

Description

technical field [0001] The present invention relates to polishing compositions and methods of using the same to polish substrates. More particularly, the present invention relates to chemical-mechanical polishing compositions suitable for polishing substrates containing phase change materials such as germanium-antimony-tellurium alloys. Background technique [0002] PRAM (Phase Change Random Access Memory) devices (also known as bidirectional memory devices or PCRAM devices) use phase change materials that can be electrically switched between an insulating amorphous phase and a conducting crystalline phase for electronic memory applications ( PCM). Typical phase change materials suitable for these applications use groups VIB (chalcogenides such as Te or Po) and VB of the periodic table combined with one or more metallic elements such as In, Ge, Ga, Sn or Ag (such as Sb) of various elements. A particularly useful phase change material is a germanium (Ge)-antimony (Sb)-tell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/302C09G1/02B24B37/00
CPCB24B37/044C09G1/02G11C13/0004H01L21/31053C09K3/1463
Inventor 陈湛罗凯罗伯特·瓦卡西
Owner CABOT MICROELECTRONICS CORP