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Method for forming nano gap in silicon material

A nano-gap, silicon material technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing and other directions, can solve the problems of electrical interconnection between driving/sensing electrodes and movable structures, complex preparation process, etc., and achieves easy control of release time, The production process is simple and the cost is reduced

Inactive Publication Date: 2010-07-07
PEKING UNIV
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Problems solved by technology

[0010] While the self-alignment method reduces the gap between the capacitive plates, it faces the problem of effective release of the thick device structure. At the same time, when the structure is deformed due to stress, it is prone to the problem of electrical interconnection between the driving / sensing electrodes and the movable structure, and The preparation process is complex

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  • Method for forming nano gap in silicon material
  • Method for forming nano gap in silicon material
  • Method for forming nano gap in silicon material

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Embodiment 1

[0024] Embodiment 1, making nano-gap in silicon substrate

[0025] figure 1 The specific steps of the shown process flow chart are as follows:

[0026] 1) LPCVD 100nm silicon nitride layer 2 on silicon substrate 1, such as figure 1 As shown in (a), the silicon nitride layer 2 prevents the silicon substrate 1 from being oxidized simultaneously during the subsequent oxidation process;

[0027] 2) 800nm ​​polysilicon 3 is deposited by LPCVD, and the polysilicon 3 is photolithographically etched to form a polysilicon pattern gap with a width of 1 μm, such as figure 1 as shown in (b);

[0028] 3) Oxidize polysilicon 3, 950 DEG C of hydrogen-oxygen synthesis oxidation for 0.5 hours, polysilicon pattern gap is reduced to 100 nanometers, this layer of oxide layer 4 with nanometer gap will be used as the mask of etching silicon substrate, as figure 1 as shown in (c);

[0029] 4) After reactive ion etching (RIE) removes the silicon nitride at the gap, ASE anisotropically etches the...

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Abstract

The invention discloses a method for forming a nano gap in a silicon material. A thin silicon nitride layer and polycrystalline silicon are first deposited on the silicon material in sequence, the polycrystalline silicon is photoetched, and the gap with certain width is formed on a polycrystalline silicon graph; then, the polycrystalline silicon graph is oxidized, a formed oxidation layer leads the gap to become narrow to the nano level, and the oxidation layer is adopted as a making film to carry out anisotropic etching on silicon, so as to form the nano gap. With low cost, the simple and easy method can be applied for preparing a micro-nano electromechanical device, for example a nano gap capacitance type resonator.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing nanometer gaps in silicon materials in the manufacturing process of micro-nano electromechanical devices. Background technique [0002] At present, micro-electro-mechanical systems, such as accelerometers, resonators, and gyroscopes, have been widely used in various electronic products, and electrostatic drive readout is the most common energy conversion method of micro-electro-mechanical systems. The electrostatic drive structure is simple and the detection method is mature, but the equivalent input and output impedance of the MEMS with the electrostatic drive structure is high, and an additional impedance matching circuit needs to be added in the process of integrating with the IC. Reducing the capacitance gap of MEMS can not only reduce the input and output impedance, but also improve the sensitivity of the device. It has become a trend to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 于晓梅刘毅张宇飞
Owner PEKING UNIV