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Method for preparing Bi4-XLaXTi3O12 ferroelectric film by solvothermal method

A ferroelectric thin film and solvothermal technology, which is applied in the field of preparing Bi4-XLaXTi3O12 ferroelectric thin film by solvothermal method, can solve the problems of difficulty in meeting the requirements of FRAM, small Pr value, etc., and achieve uniform ferroelectric thin film, short reaction period, Simple effect of process equipment

Inactive Publication Date: 2012-07-25
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Pr value of BTO film is still small, which is still difficult to meet the requirements of FRAM

Method used

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  • Method for preparing Bi4-XLaXTi3O12 ferroelectric film by solvothermal method
  • Method for preparing Bi4-XLaXTi3O12 ferroelectric film by solvothermal method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1) First, the analytically pure Bi(NO 3 ) 3 ·5H 2 O and La(NO 3 ) 3 ·nH 2 O according to Bi 4-X La X Ti 3 o 12 The molar ratio in the general chemical formula is added in the analytically pure ethylene glycol, and wherein X=0.1, is formulated into cationic (Bi 3+ +La 3+ ) concentration is a transparent solution of 2mol / L, and the gained solution is denoted as A;

[0016] 2) Then, add butyl titanate stabilized with acetylacetone dropwise to solution A, and keep stirring, so that the molar ratio of (Bi+La):Ti=4:3 in the mixed solution, and the obtained solution is denoted as B;

[0017] 3) Add analytically pure citric acid 2 times the number of moles of cations (Bi+La+Ti) in solution B to B solution, and keep stirring to form a precursor solution, adjust the pH value of the precursor solution to 1, and obtain The solution is denoted as C;

[0018] 4) Pour the C solution into the hydrothermal reaction kettle, and the filling degree is controlled at 60%; then pu...

Embodiment 2

[0022] 1) First, the analytically pure Bi(NO 3 ) 3 ·5H 2 O and La(NO 3 ) 3 ·nH 2 O according to Bi 4-X La X Ti 3 o 12 The molar ratio in the general chemical formula is added in the analytically pure ethylene glycol, and wherein X=0.45, is formulated into cationic (Bi 3+ +La 3+ ) concentration is a transparent solution of 5mol / L, and the gained solution is denoted as A;

[0023] 2) Then, add butyl titanate stabilized with acetylacetone dropwise to the solution A, and keep stirring, so that the molar ratio of (Bi+La):Ti=5:3 in the mixed solution, and the obtained solution is denoted as B;

[0024] 3) Add analytically pure citric acid 3 times the number of moles of cations (Bi+La+Ti) in solution B to B solution, and keep stirring to form a precursor solution, adjust the pH value of the precursor solution to 4, and obtain The solution is denoted as C;

[0025] 4) Pour the C solution into the hydrothermal reaction kettle, and the filling degree is controlled at 50%; th...

Embodiment 3

[0028] 1) First, the analytically pure Bi(NO 3 ) 3 ·5H 2 O and La(NO 3 ) 3 ·nH2 O according to Bi 4-X La X Ti 3 o 12 The molar ratio in the general chemical formula is added in the analytically pure ethylene glycol, and wherein X=0.8, is formulated into cationic (Bi 3+ +La 3+ ) concentration is a transparent solution of 10mol / L, and the gained solution is denoted as A;

[0029] 2) Then, add butyl titanate stabilized with acetylacetone dropwise to the solution A, and keep stirring, so that the molar ratio of (Bi+La):Ti=4.5:3 in the mixed solution, and the obtained solution is denoted as B;

[0030] 3) Add analytically pure citric acid 1 times the number of moles of cations (Bi+La+Ti) in solution B to solution B, and keep stirring to form a precursor solution, adjust the pH value of the precursor solution to 2, the obtained The solution is denoted as C;

[0031] 4) Pour the C solution into the hydrothermal reaction kettle, and control the filling degree at 80%; then p...

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Abstract

The invention relates to a method for preparing a Bi4-XLaXTi3O12 ferroelectric film by the solvothermal method. Firstly, Bi(NO3)3.5H2O and La(NO3)3.nH2O are added into ethylene glycol to obtain solution A; then, butyl titanate adopting acetylacetone for stabilization is dripped into the solution A to obtain solution B; citric acid is added into the solution B to obtain solution C; the solution C is poured into a hydro-thermal reaction vessel, then a glass substrate is placed at the bottom of the hydro-thermal reaction vessel, the hydro-thermal reaction vessel is sealed and placed into a DHG-9075A electrical heating constant-temperature air drying oven for heating reaction; after the reaction, the sealed hydro-thermal reaction vessel is naturally cooled to the room temperature; the hydro-thermal reaction vessel is opened for taking out the glass substrate, then the glass substrate is washed for times by deionized water and absolute ethyl alcohol respectively and dried in the electricalheating air drying oven; and finally, the final product Bi4-XLaXTi3O12 ferroelectric film can be obtained on the glass substrate. The invention adopts the solvothermal method for fast preparing the Bi4-XLaXTi3O12 ferroelectric film on the glass substrate; as the reaction is completed in the liquid phase in one time, the aftertreatment is not needed; in addition, a processing unit is simple, the obtained Bi4-XLaXTi3O12 ferroelectric film is uniform, and the reaction period is short.

Description

technical field [0001] The present invention relates to a Bi 4-X La X Ti 3 o 12 The preparation method of material, be specifically related to a kind of solvothermal method and prepare Bi 4-X La X Ti 3 o 12 method for ferroelectric thin films. Background technique [0002] Bismuth titanate (Bi 4 Ti 3 o 12 , BTO) is a ferroelectric thin film with a layered perovskite structure, which has attracted much attention due to its high Curie temperature, good fatigue resistance and wide application prospects in non-volatile memory (FRAM) and electro-optical devices. . But the Pr value of BTO film is still small, it is still difficult to meet the requirements of FRAM. Studies have shown that A-site doping can increase the Pr value of BTO thin films and improve their fatigue resistance. Therefore, in-depth research on the influence of the amount of La ions doped in BTO films on the crystallization properties and ferroelectric properties of BTO films will be of great import...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22
Inventor 黄剑锋王博曹丽云吴建鹏
Owner SHAANXI UNIV OF SCI & TECH