Crystalline silicon solar battery edge etching process

A technology of solar cells and crystalline silicon, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of large amount of etching on the front of the battery, large loss of photocurrent, and degradation of battery performance, so as to improve photoelectric efficiency and high parallel connection of batteries Resistance, the effect of reducing photocurrent loss

Inactive Publication Date: 2010-07-14
山东力诺太阳能电力股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The plasma dry etching process is to etch the periphery of the silicon wafer through the alternating action of fluorine and oxygen under the condition of glow discharge. The equipment cost of this process method is relatively low, but the etching amount Larger, usually the front surface is etched at about 1-2mm, and the photocurrent loss is relatively large
The wet chemical etching method uses an etching solution composed of nitric acid and hydrofluoric acid to etch the edge of the

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Use inkjet equipment to spray the corrosive slurry on the front surface of the silicon wafer (the light-absorbing side of the silicon wafer) after diffusion and remove the phosphosilicate glass. The corrosive slurry contains 10-20% tetramethylammonium hydroxide (TMAH) Alkaline corrosion slurry; control the amount of slurry sprayed and the edge corrosion range through inkjet equipment, so that the edge corrosion is controlled within 0.2mm; put the silicon wafer sprayed with the corrosion slurry at a temperature of 200 ℃ for 5 minutes; After drying, the silicon wafer was rinsed with deionized water for 10 minutes.

Embodiment 2

[0016] Use inkjet equipment to spray the corrosive slurry around the reverse surface of the silicon wafer after diffusion and remove the phosphosilicate glass (the other side of the silicon wafer light-absorbing surface). The corrosive slurry contains 10-20% tetramethylammonium hydroxide (TMAH) alkaline corrosion slurry; control the amount of slurry sprayed and the edge corrosion range through inkjet equipment, so that the edge corrosion is controlled within 0.2mm; put the silicon wafer sprayed with the corrosion slurry at a temperature of 180℃ After drying, the silicon wafer is rinsed with deionized water for 6 minutes.

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PUM

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Abstract

The invention belongs to the field of a solar battery manufacture process, in particular to a crystalline silicon solar battery edge etching process, which comprises the steps of edge etching and residue removal. The invention adopts a corrosive chemical pulp spray coating method for etching the edge of a silicon chip, the etching amount of the periphery of the silicon chip surface can be controlled within 0.2 mm, the PN junction loss of the silicon chip surface can be greatly lowered, the light absorption of the light absorption surface of the silicon chip can be improved, the photoelectric efficiency of batteries can be improved, the process is stable, and the control is easy.

Description

Technical field [0001] The invention belongs to the field of solar cell manufacturing processes, and in particular relates to a crystalline silicon solar cell edge etching process. Background technique [0002] During the diffusion process of solar cells, whether it is single-sided diffusion or double-sided diffusion, a diffusion layer is inevitably formed on the periphery of the silicon wafer. The peripheral diffusion layer makes the upper and lower electrodes of the battery form a short-circuit ring, which must be removed to separate the PN junction between the front and back of the battery. Any small local short circuit on the periphery will reduce the parallel resistance of the battery, increase the reverse current, and reduce the overall electrical performance of the solar cell. [0003] At present, the edge removal processes used in industrial production mainly include dry plasma etching process, wet chemical etching method and laser edge etching method. The plasma dry etch...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 焦云峰杨青天程谦礼李玉花
Owner 山东力诺太阳能电力股份有限公司
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