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Plasma processing method and plasma processing apparatus

A processing method and processing device technology, applied in ion implantation plating, coating, electrical components, etc., can solve problems such as difficult control of protective film coverage

Active Publication Date: 2010-07-21
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, the finer the shape of the pattern, the more difficult it is to control the coverage of the protective film as the depth of the pattern deepens

Method used

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  • Plasma processing method and plasma processing apparatus
  • Plasma processing method and plasma processing apparatus
  • Plasma processing method and plasma processing apparatus

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Experimental program
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no. 1 Embodiment approach

[0045] figure 1 It is a schematic structural diagram of a plasma processing apparatus 11 for carrying out the plasma processing method in the first embodiment of the present invention. The plasma processing apparatus 11 shown in the drawing has both the function of an NLD (magnetic neutral loop discharge) type plasma etching apparatus and the function of a sputtering apparatus using the NLD method.

[0046] exist figure 1 In the vacuum chamber 21, a vacuum cavity including a plasma forming space 21a is formed, and a vacuum pump P such as a turbomolecular pump is connected to the vacuum chamber 21, and the air inside the vacuum chamber 21 is exhausted by the vacuum pump P to a predetermined level. Vacuum.

[0047] The periphery of the plasma forming space 21 a is divided by a cylindrical wall 22 made of a transparent insulating material such as quartz and constituting a part of the vacuum pump 21 . The outer peripheral side of the cylindrical wall 22 is provided with: a high...

no. 2 Embodiment approach

[0131] Figure 10It is a schematic configuration diagram of a sputtering device 12 as a plasma processing device in the second embodiment of the present invention. In addition, in the drawings, parts corresponding to those of the above-mentioned first embodiment are assigned the same reference numerals, and detailed description thereof will be omitted.

[0132] In the sputtering device 12 of the present embodiment, the cylindrical wall 22 between the vacuum chamber 21 and the top plate 28 is not provided ( figure 1 ), which adopts a structure in which the top plate 28 is directly arranged on the upper part of the vacuum chamber 21. A plasma forming space 21 a is formed between the stage 26 and the top plate 28 . The distance D between the stand 26 and the top plate 28 is set to 10 mm or more and 40 mm or less.

[0133] A high-frequency electric field necessary for plasma generation is generated by the stage 26 and the top plate 28 as its opposing electrode, that is, a high-...

no. 3 Embodiment approach

[0136] Figure 11 It is a schematic configuration diagram of a sputtering device 13 as a plasma processing device in a third embodiment of the present invention. In addition, in the drawings, parts corresponding to those of the above-mentioned first embodiment are assigned the same reference numerals, and detailed description thereof will be omitted.

[0137] In the sputtering device 13 of the present embodiment, an opening is formed in the center of the top plate 28 , and the top plate 28 is ring-shaped, and the target 31 is also ring-shaped correspondingly. An electrode member 33 is attached to the opening of the top plate 28 with an insulating member 34 interposed therebetween, and the electrode member 33 is connected to a fourth high-frequency power source RF4 via a capacitor 32 . The fourth high-frequency power supply RF4 applies a predetermined high-frequency power to the electrode member 33, not only forming a high-frequency electric field in the plasma formation space...

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Abstract

To provide a plasma processing method and a plasma processing apparatus having high coverage characteristics and excellent in-plane uniformity. [MEANS FOR SOLVING PROBLEMS] At the time of depositing sputter particles sputtered from a target (31) by plasma on the surface of a substrate (W), the sputter particles are decomposed by plasma to generate active species, and then deposited on the surfaceof the substrate. Thus, film configuration similar to that formed by plasma CVD is obtained, and sputter film formation is performed with high coverage characteristics and excellent in-plane uniformity. Especially extremely high density plasma can be efficiently generated in a region with no magnetic field, since high frequency electric field and an annular magnetic neutral line (25) are used forplasma source. The plasma performs plasma processing with high in-plane uniformity by discretionarily adjusting the forming position and the size of the magnetic neutral line.

Description

technical field [0001] The present invention relates to a plasma processing method and a plasma processing apparatus using the NLD (Neutral Loop Discharge) method. Background technique [0002] In the thin film manufacturing process in the semiconductor manufacturing industry, film formation is performed on the surface of the substrate to form a thin film for wiring or an insulating film. As a film forming device, a plasma CVD device or a sputtering device is widely used at present. [0003] As a sputtering device, the following magnetron sputtering device is known: an electromagnet or a permanent magnet is arranged on the back of the target, and an annular magnetron discharge plasma is generated on the target surface and used to sputter the target, and then the sputtering A film-forming process is performed by depositing the projectile on the substrate (refer to Patent Document 1). Since the magnetron sputtering device can effectively form plasma, film formation can be pe...

Claims

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Application Information

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IPC IPC(8): H01L21/3065C23C14/35
CPCH01L21/30655C23C14/345H01J37/3266H01J37/32091H01J37/32082C23C14/022H01J37/321C23C14/354C23C14/046
Inventor 森川泰宏邹红罡
Owner ULVAC INC
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