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Preparation method of low temperature sintered small-loss iron barium niobate ceramic

A barium iron niobate, low temperature sintering technology, applied in the field of material science, can solve the problems of large dielectric loss, high sintering temperature, restricting the practical application of materials, etc., and achieve the effect of low dielectric loss and high dielectric constant

Inactive Publication Date: 2012-01-25
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Summarizing the relevant literature, it is found that the disadvantage of barium iron niobate is that the dielectric loss is relatively large, and the dielectric loss at room temperature is about 4.29 (1kHz), and its sintering temperature is as high as 1350°C
These shortcomings seriously restrict the practical application of this material

Method used

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  • Preparation method of low temperature sintered small-loss iron barium niobate ceramic
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  • Preparation method of low temperature sintered small-loss iron barium niobate ceramic

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Embodiment 1: 1) at first, according to general chemical formula BaFe 0.5 Nb 0.5 o 3 , take analytically pure BaCO 3 , Fe 2 o 3 and Nb 2 o 5 Ball mill for 4 hours after preparation, then dry, sieve, briquette, pre-fired at 1250°C for 3 hours, then pulverize the obtained block sample and pass through a 120 mesh sieve to obtain barium ferric niobate powder; 2) prepare BaCu(B 2 o 5 ) powder: according to the general chemical formula BaCu(B 2 o 5 ), take analytically pure Ba(OH) 2 , CuO and H 3 BO 3 After the preparation, ball mill for 4 hours, then dry, sieve, briquette, and pre-burn at 800°C for 3 hours, crush the resulting block sample and pass through a 120-mesh sieve to obtain BaCu(B 2 o 5 ) powder; 3) adding its mass 3% BaCu (B 2 o 5 ) the powder is mixed evenly to obtain a mixed powder; 4) adding a PVA adhesive with a mass of 5% of the mixed powder to the above mixed powder, and sieving through a 60-mesh and a 120-mesh sieve to obtain the mixed materia...

Embodiment 2

[0020] Embodiment 2: 1) at first, by chemical general formula BaFe 0.5 Nb 0.5 o 3 , take analytically pure BaCO 3 , Fe 2 o 3 and Nb 2 o 5 Ball mill for 4 hours after preparation, then dry, sieve, briquette, pre-fired at 1250°C for 3 hours, then pulverize the obtained block sample and pass through a 120 mesh sieve to obtain barium ferric niobate powder; 2) prepare BaCu(B 2 o 5 ) powder: according to the general chemical formula BaCu(B 2 o 5 ), take analytically pure Ba(OH) 2 , CuO and H 3 BO 3 After the preparation, ball mill for 4 hours, then dry, sieve, briquette, and pre-burn at 800°C for 3 hours, crush the resulting block sample and pass through a 120-mesh sieve to obtain BaCu(B 2 o 5 ) powder; 3) add its mass 4% BaCu (B 2 o 5) The powder is mixed evenly to obtain a mixed powder; 4) Add a PVA binder with a mass of 10% of the mixed powder to the above mixed powder, and sieve through a 60 mesh and a 120 mesh sieve to obtain a mixed mixture of the required compo...

Embodiment 3

[0022] Embodiment 3: 1) at first, according to general chemical formula BaFe 0.5 Nb 0.5 o 3 , take analytically pure BaCO 3 , Fe 2 o 3 and Nb 2 o 5 Ball mill for 4 hours after preparation, then dry, sieve, briquette, pre-fired at 1250°C for 3 hours, then pulverize the obtained block sample and pass through a 120 mesh sieve to obtain barium ferric niobate powder; 2) prepare BaCu(B 2 o 5 ) powder: according to the general chemical formula BaCu(B 2 o 5 ), take analytically pure Ba(OH) 2 , CuO and H 3 BO 3 After the preparation, ball mill for 4 hours, then dry, sieve, briquette, and pre-burn at 800°C for 3 hours, crush the resulting block sample and pass through a 120-mesh sieve to obtain BaCu(B 2 o 5 ) powder; 3) adding its mass 5% BaCu (B 2 o 5 ) the powder is mixed evenly to obtain a mixed powder; 4) adding a PVA adhesive with a mass of 15% of the mixed powder to the above mixed powder, and sieving through a 60 mesh and a 120 mesh sieve to obtain a mixed mixture ...

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Abstract

The invention relates to a preparation method of low temperature sintered small-loss iron barium niobate ceramic. The method comprises the following steps: compounding analytically pure BaCO3, Fe2O3 and Nb2O5, performing ball-milling, drying, sieving, briquetting, presintering to obtain iron barium niobate powder; compounding analytically pure Ba(OH)2, CuO and H3BO3, performing ball-milling, drying, sieving, briquetting, presintering to obtain BaCu(B2O5) powder; adding BaCu(B2O5) powder in the iron barium niobate powder to mix evenly and obtain mixed powder; adding PVA adhesive in the mixed powder, screening with a 60-120 meshes of sieve to obtain mixed powder of the desired composite material; and pressing the mixed powder of the composite material according to the demand to form, keeping temperature for 4h at 550 DEG C, and sintering at 930-950 DEG C for 0.5-2h to prepare the iron barium niobate ceramic. The prepared iron barium niobate ceramic of the invention has higher dielectricconstant and very low dielectric loss, the dielectric constant is about 1500 in 1KHz and the dielectric loss is 0.04. The iron barium niobate ceramic can be sintered at 920-950 DEG C.

Description

technical field [0001] The invention belongs to the field of material science and relates to a preparation method of low-loss sintered barium ferric niobate ceramics. Background technique [0002] Since the invention of the transistor in 1947, and especially the invention of the integrated circuit in 1958, microelectronics technology has developed extremely rapidly. The microelectronics industry based on this has become one of the most important pillar industries in the national economy. Based on new application requirements and the need to increase market share and competitiveness, it is necessary to continuously improve the performance and cost performance of integrated circuits. To this end, it is necessary to continuously reduce the feature size of the device, improve the integration of the chip and increase the area of ​​the silicon chip, which is also the main way for the development of microelectronics technology. In 1967, Dennard invented a very important circuit c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 杨海波林营朱建锋王芬
Owner SHAANXI UNIV OF SCI & TECH