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Method for preparing Cu-Nb alloy with high strength, high conductivity and high-temperature softening resistance

A high-conductivity, high-temperature-resistant technology, applied in the field of preparation of nano-dispersion strengthened Cu-Nb alloys, can solve the problems of micro-device conductivity interruption, low conductivity, affecting applications, etc., to prevent conductivity interruption and improve the overall performance of the alloy , the effect of convenient operation

Inactive Publication Date: 2010-09-01
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

But Cu-Al 2 o 3 Although the alloy has extremely high resistance to high temperature annealing softening ability, its strengthening particles Al 2 o 3 Non-conductive, it is easy to cause the electrical conductivity of the local area of ​​the micro device made of it to be interrupted, thus affecting its application in the field of microelectronics and electric vacuum
Nano-dispersion strengthened Cu-Nb alloys have attracted increasing attention due to their high strength and high electrical conductivity. The existing research on Cu-Nb alloys focuses on high-concentration alloy systems, which are mainly used in the field of ultra-high pulsed magnetic fields. Although it has extremely high strength, its conductivity is still low and it is difficult to meet the requirements of electric vacuum, resistance welding electrodes, high-voltage switches, electronic and electrical engineering, nuclear technology and other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] (1) getting purity is 99.98%, and the average particle size is 990g of Cu powder 990g of 15 μ m and purity is 99.95%, and the average particle size is 10 g of Nb powder 10 g of 5 μ m and puts into the agate jar after mixing, and then packs agate balls of three kinds of different radii, The radius of the large ball is 10mm, the radius of the middle ball is 5mm, and the small ball is 3.6mm. The weight percentage of the three is 1:4:5. Ball milling is carried out. The ball-to-material ratio is 10:1. solid solution powder;

[0013] (2) The Cu-Nb nanocrystalline solid solution powder is subjected to hydrogen protection annealing, the annealing temperature is 500 ° C, and the temperature is kept for 1.0 h; the annealed Cu-Nb nanocrystalline powder is uniformly mixed with the amorphous boron powder with a particle size of 100 μm, and the amorphous boron powder is added. The concentration of crystal boron powder is 5ppm, and the mixture is evacuated to 10 -2 Pa, refill 10 5 T...

Embodiment 2

[0017] (1) getting purity is 99.99%, and the average particle size is 988g of Cu powder 988g of 12 μm and purity is 99.96%, and the average particle size is 12g of Nb powder 12g of 4 μm and puts into the agate jar after mixing, and then packs into three kinds of agate balls of different radii, The radius of the large ball is 11mm, the radius of the middle ball is 5.5mm, and the small ball is 3.8mm. The weight percentage of the three is 1:3.5:4. Ball milling is carried out with a ball-to-material ratio of 13:1, a rotational speed of 230rpm, and a ball milling time of 35h. Crystal solid solution powder;

[0018] (2) The Cu-Nb nanocrystalline solid solution powder is subjected to hydrogen protection annealing, the annealing temperature is 530 ° C, and the heat preservation is 1.3 h; the annealed Cu-Nb nanocrystalline powder is uniformly mixed with boron powder with a particle size of 50 μm, and the added boron powder Concentration is 30ppm, vacuumize the mixture to 5×10 -2 Pa, r...

Embodiment 3

[0022] (1) getting purity is 99.995%, and the average particle size is 986g of Cu powder 986g of 10 μm and purity is 99.95%, and the average particle size is 14g of Nb powder 14g of 3 μm and puts into the agate tank after mixing, and then packs into three kinds of agate balls of different radii, The radius of the large ball is 12mm, the radius of the middle ball is 6mm, and the small ball is 4mm. The weight percentage of the three is 1:3:3.5, and ball milling is carried out. The ball-to-material ratio is 14:1, the rotating speed is 240rpm, and the ball milling time is 40h, and the Cu-Nb nanocrystalline solid solution is obtained. powder;

[0023] (2) The Cu-Nb nanocrystalline solid solution powder is subjected to hydrogen protection annealing, the annealing temperature is 550 ° C, and the temperature is kept for 1.5 h; the annealed Cu-Nb nanocrystalline powder is uniformly mixed with the amorphous boron powder with a particle size of 0.1 μm, and the added The concentration of ...

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Abstract

The invention discloses a method for preparing a Cu-Nb alloy with high strength, high conductivity and high-temperature softening resistance. The method comprises the following steps of: (1) preparing Cu-Nb nanocrystal solid solution powder; (2) performing vacuum hot pressed sintering to prepare a Cu-Nb alloy billet; and (3) performing copper clad, manufacturing a sheath, sealing, and heating the copper sheathed billet to 850DEG C for hot extrusion. The Cu-Nb alloy prepared by the method has the sigma b between 600 and 800MPa, the relative electric-conductivity between 84 and 89 IACS, and the soft annealing resistant temperature between 900 and 1,100 DEG C, and can be applied to the fields such as electro vacuum, resistance welding electrodes, high voltage switches, electronic components, nuclear technology and the like.

Description

technical field [0001] The present invention relates to a preparation method of Cu-Nb alloy, especially a kind of nanometer alloy with high strength, high conductivity and anti-high temperature softening performance, which can be applied in the fields of electric vacuum, resistance welding electrode, high voltage switch, electronic and electrical engineering, nuclear technology and so on. A method for preparing dispersion-strengthened Cu-Nb alloys. Background technique [0002] In recent years, the development of microwave technology, microelectronics, electronics, aerospace, aviation, nuclear technology and other fields has put forward higher requirements for various technical indicators and environmental adaptability of conductive materials, such as manufacturing VLSI lead frames and microwave Pipe grids, etc. usually require σ b ≥600MPa, relative conductivity ≥80% IACS, and high temperature resistant softening temperature must be above 800K conductive material. Pure cop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C9/00C22C27/02
Inventor 汪明朴雷若姗李周魏海根贾延琳
Owner CENT SOUTH UNIV
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