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Method for prehanging liquid metal on emitting electrode bombard and sputtered by primary ion beam

A technology of liquid metal and emitter, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc., and can solve problems such as surface exposure and infiltration of difficult emitter tungsten needles

Inactive Publication Date: 2010-09-15
CHINA UNIV OF MINING & TECH (BEIJING)
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Theoretically speaking, the surface of pure tungsten needle can be well wetted with liquid metal, but in the actual processing process, due to the oxidation and pollution of the surface of tungsten needle, it is difficult to operate the pure tungsten needle surface of the emitter in hanging gallium. The process is exposed to infiltration with liquid metal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Liquid metal emitter hanging metal gallium

[0013] The prefabricated emitter tungsten wire is used as a sample, fixed on the sample stage of the secondary ion mass spectrometer according to the sample injection standard, and injected into the sample chamber of the instrument.

[0014] The liquid metal gallium ion source was selected as the primary ion source. Adjust the relevant parameters of the secondary ion mass spectrometer, and the vacuum degree of the instrument must reach 2×10 -9 torr, the high voltage applied to the primary ion source is 15kv, the DC mode is adopted, the primary ion beam current is adjusted to 5-10nA, and the bombardment and sputtering time is controlled to 15min.

[0015] After the instrument is stabilized, select the corresponding position of the emitter tungsten wire, and use gallium ions extracted from the primary ion source to bombard and sputter the surface of the emitter tungsten wire to completely remove the oxide layer and pollution o...

Embodiment 2

[0019] Liquid metal emitter hanging metal bismuth

[0020] The prefabricated emitter tungsten wire is used as a sample, fixed on the sample stage of the secondary ion mass spectrometer according to the sample injection standard, and injected into the sample chamber of the instrument.

[0021] The liquid metal gallium ion source was selected as the primary ion source. Adjust the relevant parameters of the secondary ion mass spectrometer, and the vacuum degree of the instrument must reach 2×10 -9 torr, the high voltage applied to the primary ion source is 20kv, the direct current method is adopted, the primary ion beam current is adjusted to 5-10nA, and the bombardment and sputtering time is controlled to 15min.

[0022] After the instrument is stabilized, select the corresponding position of the emitter tungsten wire, and use gallium ions extracted from the primary ion source to bombard and sputter the surface of the emitter tungsten wire to completely remove the oxide layer a...

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Abstract

The invention discloses a method for prehanging liquid metal on an emitting electrode bombard and sputtered by a primary ion beam and relates a metal-hanging process of a liquid metal ion emitting electrode by high-resolution microanalysis, in particular to a simpler, high-recurrence rate and safe preprocessing method for hanging metal on an emitting electrode. The method comprises the following steps of: placing a tungsten filament as a pinpoint of the emitting electrode in an SIMS (Secondary Ion Mass Spectrum) with high degree of vacuum; and obtaining liquid metal ions under the action of a high-voltage electric field by a primary ion gun; bombarding and sputtering the ions on the surface of the tungsten filament to thoroughly remove an oxidation layer and pollutants on the surface of the tungsten filament of the emitting electrode and adhere an even continuous metal coating on the surface of the emitting electrode. The invention avoids the influence of the oxidation layer on the surface of the emitting electrode and pollution and ensures that liquid metal is favorably soaked on the tungsten filament as the emitting electrode to form a continuous smooth film, thereby being suitable for preparing various liquid metal ion sources.

Description

technical field [0001] The invention designs a method for pre-hanging liquid metal on a sputtering emitter by primary ion beam bombardment, and particularly relates to a metal-hanging process of a liquid metal ion emitter for high-resolution micro-area analysis. Background technique [0002] The high-resolution secondary ion mass spectrometry (SIMS) liquid metal ion source has many applications in the fields of focused ion beam micromachining, microscopy, and mass spectrometry. However, it is difficult to fabricate practical, stable emission, and long-lived liquid metal ion emitters. The characteristics of the emitter determine the performance of the focused ion beam, thereby determining the accuracy of microfabrication and micro-area analysis, so it is very meaningful to develop a liquid metal ion emitter that emits stably (1. Microfabrication technology for preparation of gallium liquid metal ion source in Tsinghua University ). [0003] The key to preparing a liquid met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46C23C14/16
Inventor 梁汉东李文攀盛守祥刘俐媛
Owner CHINA UNIV OF MINING & TECH (BEIJING)
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