Light-emitting diode and manufacturing method thereof

Abstract

The invention provides a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, an N-type conductive semiconductor layer, a P-type conductive semiconductor layer, an active region and a strain-compensating layer, wherein the strain-compensating layer is positioned between the N-type conductive semiconductor layer and the active region to increase compound probability of an electron and a hole.

Description

technical field [0001] The invention relates to a light emitting diode (Light Emitting Diode) structure, in particular to a light emitting diode with a strain compensation layer. Background technique [0002] The reason why light-emitting diodes (Light Emitting Diode) can emit light is mainly due to the use of the physical characteristics of semiconductors that are converted into light energy after applying electrical energy. The electrons and holes are combined with each other, and the remaining energy is released in the form of light after the combination. With the development of semiconductor technology, optoelectronic-related industries follow the technological trend and continue to research and develop High Brightness LEDs, not only high-brightness white light diodes used in lighting, but also high-brightness light-emitting diodes of various colors, and even In the future, light-emitting diodes will replace the current traditional lighting devices, and R&D personnel ar...

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Problems solved by technology

[0011] However, the lattice structure of the general gallium nitride (GaN) material is a three-dimensional hexagonal lattice structure (wurtzitehexagonal lattice structure), the lattice structure and the substrate are strained due to lattice mismatch, and the P-N junction is strained due to the strain The generation of a polarized electric field will reduce the combination probability of electrons and holes inside the material, which will affect the luminous brightness of the light-emitting diode.

Doping group IV impurities into the cladding layer of the light-emitting diode material can indeed reduce the polarization electric field effect caused by lattice mismatch between the cladding layer and the active region, and help to improve the luminous brightness of the light-emitting diode, but the impurity of group IV Impurities are easy to diffuse into the active region (Active region) of the light-emitting diode, which instead leads to a decrease in the luminous characteristics of the active region, a decrease in the overall luminous brightness, and even affects the electrical properties of the light-emitting diode.

[0012] In addition to the method for improving the brightness of light-emitting diodes proposed in the above patents, Lumileds Lighting U.S., LLC, in U.S. Patent No. 6,955,933, describes the use of a graded process technology for light-emitting diode materials. The quantum well and quantum barrier layer in the active area are grown in a graded manner, the purpose is to reduce the average indium content in the active area in this way, so as to reduce the overall active area due to InGaN and Strain caused by lattice mismatch in GaN affects the recombination efficiency of electrons and holes

[0013] This patented method can change the original quantum well structure in the active region of the light-emitting diode to form graded quantum wells and quantum barriers. By relieving the polarization electric field effect in the active region, it can also reduce the polarization electric field effect of the material itself. , but using the staged (graded) quantum wells and quantum barriers in the active region of the light-emitting diode, the stability of the light-emitting wavelength is not good for the quantum wells, and it is easy to reduce its impact on the quantum wells for the quantum barriers. Internal carrier confinement function reduces luminous efficiency

[0014] On the other hand, Arima Optoelectronics Corporation (Arima Optoelectronics Corporation) proposed in US Patent US 6614060 to insert a layer of functional material between the active region (Active region) of the light-emitting diode and n-type gallium nitride (GaN), which The role played by the electron accumulating layer (electron accumulating layer) to improve the light-emitting diode electrical energy conversion efficiency, this method does increase the brightness, but the result is not significant

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