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Preparation method of zinc oxide nanometer wafer array with large area and high orientation

A zinc oxide nanometer and high-orientation technology, which is applied in the field of preparation of nanomaterial alignment, can solve the problem of single product morphology, and achieve the effects of simple process, low reaction temperature and high purity

Inactive Publication Date: 2010-09-29
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

The disadvantage is that the morphology of the products that can be prepared in a large area is relatively simple, and most of them are one-dimensional ZnO nanowire arrays.

Method used

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  • Preparation method of zinc oxide nanometer wafer array with large area and high orientation
  • Preparation method of zinc oxide nanometer wafer array with large area and high orientation
  • Preparation method of zinc oxide nanometer wafer array with large area and high orientation

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Embodiment Construction

[0017] Below in conjunction with example technical scheme of the present invention is further described:

[0018] 1. Dissolve equimolar amounts of chemically pure zinc nitrate hexahydrate and hexamethylenetetramine in a 1L volumetric flask with ionized water to prepare a reaction solution with a molar concentration of 0.05mol / L. It was then ultrasonically treated for 1 hour and then removed for use.

[0019] 2. Divide the area of ​​5 pieces into 2cm 2 The FTO conductive glass loaded with a 200nm thick ZnO thin film was used as a growth substrate, which was first cleaned with acetone, absolute ethanol and deionized water, and finally dried. Put the above-mentioned treated substrate into a reaction kettle with a polytetrafluoroethylene liner, inject the reaction solution prepared in the first step, and keep the temperature at 95°C for 24 hours, and then keep it at 60°C for 48 hours , and finally stood at 25°C for 10 hours.

[0020] 3. After the reaction is over, take out the ...

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Abstract

The invention relates to a preparation method of a zinc oxide nanometer wafer array with large area and high orientation, which belongs to the technical field of the preparation of nanometer material array, and comprises the following steps that: zinc nitrate hexahydrate and hexamethylene tetramine with equal mole number are dissolved in deionized water and are treated by ultrasonic wave for a long time to obtain reaction solution; an FTO conductive glass substrate which is loaded with a zinc oxide film with the thickness of 200 nm is repeatedly washed by acetone, absolute ethyl alcohol and deionized water, and finally the conductive glass substrate is dried to be used as a growth substrate. The substrate which is well treated is arranged into the reaction solution which is prepared in the first step to be heat preserved in different stages after being sealed, and the substrate is washed and dried to obtain the zinc oxide nanometer wafer array. The preparation method has the advantages that: the prepared product has large yield and large specific area, low reaction temperature, high efficiency and low cost, and is applicable to the parts such as dye sensitization solar battery, and is particularly applicable to the industrialized mass production.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanomaterial arrays, and in particular provides a method for preparing a large-area and high-orientation zinc oxide nano-flake array. A zinc oxide nano-flake array with consistent orientation is synthesized by a multi-stage hydrothermal method. Large-area aligned ZnO nanoflake arrays were prepared by a simple process. Background technique [0002] ZnO is a group II-VI compound and a wide bandgap direct bandgap semiconductor material with a bandgap width of 3.37eV at room temperature. It has high melting point and thermal conductivity, good chemical stability, and has the advantages of non-toxicity, abundant raw materials and low price. It has broad application prospects in ultraviolet light-emitting devices, field emission devices, surface acoustic wave devices, piezoelectric transducers, sensors, and solar cells. (M.H.Huang, S.Mao, H.Feick, H.Q.Yan, Y.Y.Wu, H.Kind, E.Weber, R.Russo, P.D....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23
Inventor 张跃秦子黄运华齐俊杰廖庆亮李会峰苏嘉
Owner UNIV OF SCI & TECH BEIJING
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