Resource utilization method of silicon wafer cutting and machining mortar at room temperature

A silicon wafer cutting and recycling technology, applied in the field of resource utilization of silicon wafer cutting and processing mortar at room temperature, can solve the problems of equipment investment and operating cost increase, decomposition, resource utilization efficiency decline, etc.

Inactive Publication Date: 2010-10-06
JIANGSU JIAYU RESOURCE UTILIZATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, this will inevitably lead to an increase in heat supply, equipment investment and operating costs; on the other hand, due to the increase in temperature, it will cause changes in the stability of the effective components in the mortar system. , and may even cause effective components to decompose, resulting in a decrease in resource utilization efficiency and an increase in the difficulty of recycling

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Utilize the technology of the present invention to process silicon wafer cutting mortar at room temperature, wherein the mass ratio of silicon carbide and cutting fluid is 1:1, and the mass ratio of silicon carbide and cutting fluid in the silicon wafer cutting mortar is 45%. Silicon and cutting fluid came from Lianyungang Jiayu Electronic Material Technology Co., Ltd. The specific steps are as follows:

[0032] Step 1: Send 1000Kg of mortar that has been pretreated to remove large particles of impurities into a 2000L mixing tank through a delivery pump. After starting to stir for 10 minutes, add 50Kg of interface modifier within 20 minutes. The mixing temperature is room temperature. The composition is: polyethylene glycol 200 (PEG200) 25g, polyethylene glycol 10000 (PEG10000) 10g, nonionic surfactant (OP-10) 10g, penetrant (JFC) 5g. The mixture was further stirred and mixed uniformly at room temperature for 1 hour.

[0033] In step 2, the above mixture is transporte...

Embodiment 2

[0037]Utilize the technology of the present invention to process silicon wafer cutting mortar under room temperature conditions, wherein the mass ratio of silicon carbide and cutting fluid is 1: 1, the mass ratio of silicon carbide in the silicon wafer cutting mortar is 50%, and the mass ratio of cutting fluid is 42%, the silicon carbide used comes from Zhengzhou Haiwang Micro Powder Co., Ltd., and the cutting fluid comes from Lianyungang Jiayu Electronic Material Technology Co., Ltd. The specific steps are as follows:

[0038] Step 1: Send 1000Kg of mortar that has been pretreated to remove large particles of impurities into a 2000L mixing tank, start stirring for 10 minutes, add 40Kg of interface modifier within 20 minutes, the mixing temperature is room temperature, and the separation agent The composition is: polyethylene glycol 400 (PEG200) 10g, nonionic surfactant (OP-10) 10g, penetrant (JFC) 20g. The mixture was further stirred and mixed uniformly at room temperature f...

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PUM

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Abstract

The invention relates to a resource utilization method of silicon wafer cutting and machining mortar at room temperature. According to the technical scheme provided by the invention, the resource utilization method comprises the following steps of: 1. adding an interfacial modifier in the silicon wafer cutting and machining mortar and evenly mixing, wherein the amount of the interfacial modifier is 1-20 percent (weight ratio); 2. carrying out first-order or multi-order mechanical separation on the mixture in the step 1 through a mechanical separator to obtain a solid-phase material and a liquid-phase material; 3. carrying out alkaline-washing, acid-washing and cleaning on the solid-phase material in the step 2, and drying and grading the obtained wet material to obtain a high-purity silicon carbide product; 4. removing ions in the liquid-phase material in the step 2 through strong acid and strong base ion exchange resin, and controlling two key indexes of ion contents, conductivity, and the like; decoloring by using a decoloring agent, and separating by using the mechanical separator to obtain a recovered cutting fluid. From the step 1 to the step 4, except for the step 3 in whichthe drying temperature is necessary to improve according to drying working procedures in the drying process of the wet material, all other operation processes are respectively carried out at the roomtemperature. The method has low unit energy consumption and low one-time equipment investment, is used for industrial practice, and has the characteristics of simple and convenient implementation, distinct flow and stable components.

Description

technical field [0001] The invention relates to a resource utilization method of silicon wafer cutting mortar at room temperature. The application field is mainly the resource utilization of silicon wafer cutting and processing mortar in the solar energy industry and silicon wafer cutting and processing mortar in the electronics industry. technical background [0002] Silicon wafers are an important foundation for the development of the solar industry. In the process of silicon wafer processing, cutting silicon rods (ingots) into sheets of a certain thickness by special wire cutting equipment is the current international processing method. With the rapid development of the global solar energy industry, the processing volume and demand of silicon wafers have increased significantly; correspondingly, the mortar produced in the cutting and processing of silicon wafers will also increase proportionally. [0003] The whole process of cutting crystal materials depends on the com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 刘来宝朱志翔孙余凭
Owner JIANGSU JIAYU RESOURCE UTILIZATION
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