Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof

A phase change material, silicon substrate technology, applied in vanadium oxide and other directions, can solve the problems of difficult industrialized production, harsh reaction conditions, high production cost, etc., and achieve the effects of high repeatability, simple preparation process and low production cost

Inactive Publication Date: 2010-11-24
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the above-mentioned nanowires, nanoribbons, nanorods, etc., are all one-dimensional VO 2 Therefore, in actual use, it cannot meet the needs of related fields, and it is difficult to apply to large-scale industrial production, and the reaction conditions are harsh and the production cost is high.

Method used

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  • Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof
  • Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof
  • Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (a), 0.38g oxalic acid (C 2 h 2 o 4 ) powder was dissolved in 40ml water, stirred with a magnetic stirrer, after the powder was completely dissolved, 0.4g ammonium metavanadate (NH 4 VO 3 ) powder, continue stirring to form an orange solution.

[0024] (b) First put the cleaned silicon wafer into the autoclave, then pour the above solution into a 50ml autoclave, seal the autoclave, put it into a blast drying oven, and keep the reaction at 160°C for 24 Hours, naturally cool down to room temperature, that is, the compound ribbon-shaped VO on the silicon wafer 2 Nanoflower-structured phase change materials.

[0025] The VO 2 The crystal is ribbon VO 2 Nanoflower structure, oriented generation from nanoribbons, ribbon-like VO 2 The diameter of the nanoflower structure is 11um, and the width of the nanoribbon is 100nm.

[0026] Ribbon VO 2 The X-ray diffraction pattern of the nanoflower structure is shown in figure 1 , banded VO 2 The SEM image of the nanoflower ...

Embodiment 2

[0028] (a) 0.4g oxalic acid (C 2 h 2 o 4 ) powder was dissolved in 40ml of water, stirred with a magnetic stirrer, after the powder was completely dissolved, 0.3g of ammonium metavanadate (NH 4 VO 3 ) powder, continue stirring to form an orange solution.

[0029] (b) Ribbon-shaped VO growth on silicon wafer 2 Nanoflower structure: first put the cleaned silicon wafer into an autoclave, then pour the above solution into a 50ml autoclave, seal the autoclave and put it into a blast drying oven, and keep the reaction at 160°C for 24 Hours, naturally cool down to room temperature, that is, the compound ribbon-shaped VO on the silicon wafer 2 Nanoflower-structured phase change materials.

[0030] The VO 2 The crystal is ribbon VO 2 Nanoflower structure, oriented generation from nanoribbons, ribbon-like VO 2 The diameter of the nanoflower structure is 12 μm, and the width of the nanoribbon is 200 nm.

[0031] Its X-ray diffraction pattern is basically similar to that of Exam...

Embodiment 3

[0033] (a) 0.45 oxalic acid (C 2 h 2 o 4 ) powder was dissolved in 40ml water, stirred with a magnetic stirrer, after the powder was completely dissolved, 0.5g ammonium metavanadate (NH 4 VO 3 ) powder, continue stirring to form a light yellow solution.

[0034] (b) Ribbon-shaped VO growth on silicon wafer 2 Nanoflower structure: first put the cleaned silicon wafer into an autoclave, then pour the above solution into a 50ml autoclave, seal the autoclave and put it into a blast drying oven, keep the reaction at 180°C for 36 Hours, naturally cool down to room temperature, that is, the compound ribbon-shaped VO on the silicon wafer 2 Nanoflower-structured phase change materials.

[0035] The VO 2 The crystal is ribbon VO 2 Nanoflower structure, oriented generation from nanoribbons, ribbon-like VO 2 The diameter of the nanoflower structure is 18 μm, and the width of the nanobelt is 700 nm.

[0036] Its X-ray diffraction pattern is basically similar to Embodiment 1, band-...

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Abstract

The invention discloses a phase-change material compounded with a strip VO2 nanoflower structure on a silicon substrate and a preparation method thereof. The material comprises the silicon substrate and a VO2 crystal which grows on the silicon substrate; and the VO2 crystal grows in a direction vertical to the silicon substrate, has a strip nanoflower structure, and is directionally generated by nanobelts. The preparation method comprises the following steps of: adding ammonium metavanadate into the aqueous solution of oxalic acid, impregnating a silicon wafer in the aqueous solution, reacting at the temperature of between 150 and 180 DEG C under the sealed condition for 24 to 36 hours, and naturally cooling to the temperature of between 18 and 25 DEG C to prepare the phase-change material. The material serving as the cathode material of a Li cell has the advantages of high charging and discharging performance and cyclic voltammetry performance, stable material charging and discharging, and reusability. The phase-change material compounded with the strip VO2 nanoflower structure on the silicon substrate and the preparation method have the advantages of low cost, simple growth condition, high repeatability, safety and the like, and are suitable for large-scale industrialized production.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, semiconductor materials and devices, in particular to a compound strip-shaped VO on a silicon substrate. 2 Phase change material with nanoflower structure and preparation method thereof. Background technique [0002] VO 2 It is a thermally induced phase change compound. In the single crystal state, it will show obvious metal-semiconductor phase transition characteristics at a temperature of about 68°C. When the temperature is lower than 68°C, VO 2 It is in a semiconducting state with a monoclinic crystal structure; when the temperature is higher than 68°C, VO 2 Transforms into a metallic state with a tetragonal rutile structure and a very rapid phase transition. [0003] With the occurrence of phase transition, many of its physical properties, such as the refractive index n, reflectivity R, and resistivity, all undergo sudden changes, and the magnitude of the change in resist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G31/02
Inventor 蒋雯陶郁可倪娟朱自强
Owner EAST CHINA NORMAL UNIV
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