Ion implant method

Abstract

The invention discloses an ion implant method, comprising the following step: implanting ions according to the pre-specified ion implant sequence, wherein the sequence is as follow: germanium ions, arsenic ions, boron ions, indium ions and carbon ions. The method can effectively improve the performance of the semi-conductor components and eliminate or reduce the adverse impact of the short channel effect and / or reverse short channel effect on the semi-conductor components.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor components, in particular to an ion implantation method. Background technique [0002] In the manufacturing technology of semiconductor components, since the conductivity of silicon in a pure state is very poor, only a small amount of impurities are added to silicon to change the structure and conductivity of silicon, so that silicon can become a useful semiconductor. The above process of adding a small amount of impurities to silicon is called doping. Silicon doping technology is the basis for preparing semiconductor components, and ion implantation (Ion Implant) technology is one of the most important doping methods. The ion implantation technique is a method of introducing a controllable amount of impurities into a silicon substrate, thereby changing its electrical properties. Since ion implantation technology can repeatedly control the concentration and depth of doped impuriti...

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Problems solved by technology

On the other hand, due to some damage to components during doping or ion implantation, there may be a transient enhanced diffusion of boron (boron) ions during heat treatment, resulting in a peak-shaped distribution of boron ions on both sides of the channel , so that the threshold voltage of the components increases with the decrease of the gate length (that is, the gate length), resulting in the non-uniformity of the threshold voltage distribution with the gate length, which is easy to cause the drift of the characteristics of the components. This effect is usually called Reverse Short Channel Effect (RSCE, Reverse Short Channel Effect)

[0004] Since the above-mentioned short channel effect and reverse short channel effect will adversely affect the performance of semiconductor components and increase the complexity of the processing process, it is difficult for the obtained components to meet the specifications required in the design, so The above two effects have become obstacles in the development of the manufacturing process of 65nm and below semiconductor components

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