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High-fluorine negative photoresist and application thereof to polymer optical waveguide device

A negative photoresist, polymer technology, applied in the direction of light guides, optical components, instruments, etc., can solve the problem of large light loss and so on

Inactive Publication Date: 2010-12-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cross-linked Tg of acid-sensitive epoxy resin series photoresists can reach above 200°C, which can fully meet the requirements, but the optical loss in the optical communication band (1310 and 1550nm) is relatively large

Method used

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  • High-fluorine negative photoresist and application thereof to polymer optical waveguide device
  • High-fluorine negative photoresist and application thereof to polymer optical waveguide device
  • High-fluorine negative photoresist and application thereof to polymer optical waveguide device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Dissolve 2.00g of pentafluorostyrene and 5.00g of fluorine-containing bisphenol A in 25ml of N,N-dimethylacetamide, and add the catalyst CaH 21.37g, CsF 0.13g, the mixture was heated up to 80°C, and reacted at this temperature for 18h. Filter to obtain a clear liquid. The solvent was evaporated. Column chromatography (ethyl acetate:petroleum ether=1:5) gave pure product. Dissolve the upper product in 25g of epichlorohydrin, catalyze it with solid caustic soda, add 0.04g of NaOH every 0.5h, and react for 8 hours in total. After the addition, keep at 60°C for 6h to complete the cyclization reaction. Steam unreacted epichlorohydrin, then extract with benzene, filter and evaporate benzene. The product from the previous step was dissolved in N,N-dimethylacetamide, 0.05 g of azobisisobutyronitrile was added, and the reaction was carried out at 60° C. for 6 h under nitrogen gas. The solvent is evaporated to obtain a high fluorine-containing epoxy resin with the following ...

Embodiment 2

[0033] Dissolve 2.00g of pentafluorostyrene and 3.40g of bisphenol A in 25ml of N,N-dimethylacetamide, add catalyst CaH 2 1.37g, CsF0.13g, the mixture was heated to 80°C and reacted at this temperature for 18h. Filter to obtain a clear liquid. The solvent was evaporated. Column chromatography (ethyl acetate:petroleum ether=1:4) gave pure product. Dissolve the upper product in 25g of epichlorohydrin, catalyze it with solid caustic soda, add 0.05g of NaOH every 0.5h, and react for a total of 8 hours. After the addition, keep at 60°C for 6h to complete the cyclization reaction. Steam unreacted epichlorohydrin, then extract with benzene, filter and evaporate benzene. The above product was dissolved in N,N-dimethylacetamide, 12 g of pentafluorostyrene was added, 0.10 g of initiator azobisisobutyronitrile was added, and the reaction was carried out at 60° C. for 6 h under nitrogen gas. The solvent is evaporated to obtain a high fluorine-containing epoxy resin with the followin...

Embodiment 3

[0037] Dissolve 2.00g of pentafluorostyrene and 5.00g of fluorine-containing bisphenol A in 25ml of N,N-dimethylacetamide, add the catalyst CaH 2 1.37g, CsF0.13g, the mixture was heated to 80°C and reacted at this temperature for 18h. Filter to obtain a clear liquid. The solvent was evaporated. Column chromatography (ethyl acetate:petroleum ether=1:5) gave pure product. Dissolve the upper product in 25g of epichlorohydrin, catalyze it with solid caustic soda, add 0.04g of NaOH every 0.5h, and react for 8 hours in total. After the addition, keep at 60°C for 6h to complete the cyclization reaction. Steam unreacted epichlorohydrin, then extract with benzene, filter and evaporate benzene. The above product was dissolved in N,N-dimethylacetamide, 15 g of pentafluorostyrene and 0.11 g of initiator azobisisobutyronitrile were added, and the reaction was carried out at 60° C. for 6 h under nitrogen gas. The solvent is evaporated to obtain a high fluorine-containing epoxy resin w...

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Abstract

The invention belongs to the technical field of polymer optical waveguide materials and devices, and in particular relates to a high-fluorine negative photoresist composition which can be used for preparing the polymer optical waveguide device and comprises high-fluorine epoxy resin, a photoinduced acid generator and an organic solvent. The high-fluorine epoxy resin is one or more compounds with structural formulae shown as (1), wherein Rf1 and Rf2 respectively and independently represent per-fluorinated, semi-fluorinated or non-fluorinated aliphatic groups, n is an integer of 5-20, and m is the integer of 0-20. The exposure wavelength of the photoresist composition is adjusted by changing the species of the photoinduced acid generator, meanwhile, because partial hydrogen atoms are substituted by fluorine atoms in the fluorinated epoxy resin, and the fluorine atoms have smaller absorbency at a communication wave band, the photoresist composition can be exposed and imaged to manufacture the polymer optical waveguide device within the range of 200-400nm.

Description

technical field [0001] The invention belongs to the technical field of polymer optical waveguide materials and devices, and in particular relates to a high fluorine-containing negative photoresist composition which can be used for preparing polymer optical waveguide devices. substances and organic solvents. technical background [0002] Photoresist compositions are used in the microlithography process to fabricate tiny electronic components, such as computer chips and integrated circuits. Generally, in these processes, a thin film of a photoresist composition is first coated on a substrate material, and then the coated substrate is baked to evaporate the solvent in the photoresist composition, and then passed through a mask plate to Exposing the photoresist layer to an activating radiation source that causes photochemical changes in the photoresist layer, visible light, ultraviolet (UV) light, electron beam and X-ray radiation energy is currently used in the microlithograph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/038G02B6/136
Inventor 崔占臣万莹史作森费旭
Owner JILIN UNIV
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