Ceramic dielectric material matched with nickel inner electrode

Abstract

The invention discloses a low-temperature high-frequency ceramic dielectric material matched with a nickel electrode, which consists of a main crystal phase, a property-modifying additive and a sintering fluxing medium. The structural formula of the main crystal phase is (MgaCabSr(1-a-b))nTicZr(1-c)O3, wherein a is more than or equal to 0 and less than or equal to 0.15; b is more than or equal to0 and less than or equal to 1; c is more than or equal to 0 and less than or equal to 0.15; and m is more than or equal to 0.8 and less than or equal to 1.1. The property-modifying additive is one ormore MnO2, Al2O3, CaO and Y2O3. The sintering fluxing medium is one or more SiO2, ZnO, Li2O, K2O and BaO. The material meets EIA standard COG characteristics, and has material uniformity, uniform size distribution, high dispersibility, good molding process and high dielectric properties. When used for manufacturing a multi-layer chip ceramic capacitor, the material is matched with the nickel electrode, and after being sintered, ceramic crystal grains uniformly and compactly grow and a dielectric layer is well matched with the inner electrode, so stress generation is reduced, a Q value of the product is increased and the performance of the product is more stable.

Description

technical field [0001] The invention relates to a ceramic dielectric material and a preparation method of the obtained components, in particular to a ceramic material conforming to COG characteristics, which can be sintered in a reducing atmosphere, and can be matched with a nickel inner electrode. A high-frequency low-dielectric ceramic dielectric material and the preparation of MLCC Products, especially suitable for the production of small size MLCC. Background technique [0002] With the penetration and expansion of electronic information technology in various technical fields, chip multilayer ceramic capacitors (MLCC for short), as an important electronic component, have always maintained the same high-level development speed as large-scale integrated circuits. The current development trend of MLCC technology is miniaturization, low voltage and large capacity, chip type, high voltage serialization, and base metalization of internal electrodes. Among them, the large-scale...

AI Technical Summary

Problems solved by technology

The dielectric constant of MLCC products is in the range of 20 to 40, and the frequency characteristics and dielectric properties are excellent, but the firing temperature of this MLCC product is 1250 ° C to 1350 ° C, resulting in high production costs

Images