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Wiring board, semiconductor device, and process for producing semiconductor device

A wiring substrate and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of reducing the adhesion of insulating films, lowering yield and reliability, and not yet achieved, etc. Problems, to achieve the effect of improving yield and reliability, and improving adhesion

Active Publication Date: 2013-06-12
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the content of organic groups is increased in order to lower the dielectric constant of the insulating film, the film will be hydrophobized and the adhesion between the insulating films will be reduced.
[0003] As described above, when the adhesion between laminated insulating films is lowered, film peeling occurs in the polishing process, and the yield and reliability are lowered.
In order to suppress this, although an adhesion enhancement method using an adhesion enhancement material, plasma, or ozone has been studied, a sufficient solution to the problem has not yet been achieved (for example, refer to Patent Document 1).

Method used

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  • Wiring board, semiconductor device, and process for producing semiconductor device
  • Wiring board, semiconductor device, and process for producing semiconductor device
  • Wiring board, semiconductor device, and process for producing semiconductor device

Examples

Experimental program
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Effect test

preparation example Construction

[0119] Preparation of the first insulating film forming material

[0120] 10 g of polycarbosilane ("NIPSI-L", manufactured by Nippon Carbon Co., Ltd., weight average molecular weight = about 400), 60 g (0.6 mol) of methyl isobutyl ketone, and 9 g (0.2 mol) of ) ethanol, at a constant temperature of 60°C, using a dropping funnel and under the condition of 2ml / min, drop 60-61% by mass of 10g nitric acid aqueous solution (0.1mol in water) dripping, and carry out 7-hour aging after the dripping ends reaction.

[0121] Next, using a separatory funnel, the reactant was dissolved in diethyl ether, a large amount of water and sodium bicarbonate were added, and water was washed until the pH became 5 to remove excess nitric acid. In order to remove the water used to remove nitric acid, after filtering, 200 ml of methyl isobutyl ketone was added, and diethyl ether was removed with a rotary evaporator until the reaction solution became 100 ml, thereby preparing a first insulating film ma...

Embodiment 1

[0129]

[0130] The multilayer wiring and semiconductor device of the present invention are produced as follows. First, if Figure 2A As shown, the element isolation film 12 is formed on the semiconductor substrate 10 by the LOCOS (LOCal Oxidation of Silicon) method. Based on the element separation film 12, an element region 14 is defined. In addition, a silicon substrate is used as the semiconductor substrate 10 .

[0131] Next, on the element region 14 , a gate electrode 18 is formed through the gate insulating film 16 . Next, side wall insulating films 20 are formed on the side surfaces of the gate electrodes 18 . Furthermore, impurities are introduced into the semiconductor substrate 10 using the sidewall insulating film 20 and the gate electrode 18 as a mask, thereby forming source / drain diffusion layers 22 in the semiconductor substrate 10 on both sides of the gate electrode 18 . As a result, transistor 24 including gate 18 and source / drain diffusion layer 22 is fo...

Embodiment 2

[0163]Manufacturing of multilayer wiring and semiconductor devices, adhesion-enhancing layer and second Detection method of Si-CxHy-Si bonding in two insulating films and evaluation method of adhesion (number of film peelings and adhesion strength). The results are shown in Table 1.

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Abstract

An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.

Description

technical field [0001] The present invention relates to a wiring board, a semiconductor device, and a method for manufacturing a semiconductor device, and more particularly, relates to a wiring board, a semiconductor device, and a method for manufacturing a semiconductor device that require increased response speed. Background technique [0002] Multilayer wiring of a semiconductor device is composed of Cu wiring and an interlayer insulating film, and in this multilayer wiring, the decrease in signal propagation speed depends on wiring resistance and parasitic capacitance between wirings. In recent years, due to the high integration of devices, the wiring width and wiring interval have become narrower, the wiring resistance has increased, and the parasitic capacitance between wirings has increased. Although the capacity of the insulating film can be reduced by reducing the thickness of the wiring, thereby reducing the cross-sectional area, thinning the wiring thickness will ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/522
CPCH01L23/53295H01L21/02348H01L21/76807H01L23/5329H01L21/76829H01L21/3121H01L21/7682H01L21/022H01L23/53238H01L21/02167H01L21/02203H01L21/02304H01L2924/0002H01L21/76801H01L21/76825Y10T428/31663H01L21/02126H01L2924/00
Inventor 尾崎史朗中田义弘今田忠纮小林靖志
Owner FUJITSU LTD
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