150V-BCD (Binary-Coded Decimal) bulk silicon manufacturing technology and LCD (Liquid Crystal Display) backlight drive chip
A 150V-BCD, manufacturing process technology, applied in semiconductor/solid-state device manufacturing, instruments, electrical components, etc., can solve the problems of limiting the application of LCD high-voltage drive technology, high LED cost, and increasing cost expenses, so as to improve chip yield , reduce chip prices, optimize the effect of charge distribution
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[0055] The BCD process development and EL driver chip design involved in the present invention will be further described below in conjunction with the accompanying drawings and examples.
[0056] figure 1 with figure 2 The specific scheme of developing 150V-BCD technology and devices is expounded. The BCD main process has a total of 24 steps, which reduces the LDPMOS two photolithography (thick gate oxide, auxiliary drift region), one implant (auxiliary drift region) and one oxidation compared with the typical BCD process. First, prepare a high-resistivity P-type substrate silicon wafer, implant high-energy ions into Sb to form an N-type buried layer, ion-implant phosphorus element P, and arsenic element As and drive them in at high temperature to form a drain pair connected to the N-type buried layer. NSINKER1 structure, epitaxial N-type epitaxial layer that can meet the Double-Resurf withstand voltage requirements, ion implantation of phosphorus element P, arsenic element...
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