Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same

A hybrid electrode and transistor technology, applied in semiconductor/solid-state device manufacturing, transistors, diodes, etc., can solve the problems of high gate, inability to achieve high breakdown voltage at the same time, and low resistance to channel penetration.

Active Publication Date: 2011-02-09
THE HONG KONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Traditional AlGaN/GaN high electron mobility transistors (HEMTs) and lateral field effect rectifiers (L-FERs) cannot achieve high breakdown voltage (or anti-channel punch-through capability) and low on-resistance at the same time, the reason is that increasing the When the channel punch-through resistance of similar devices is increased (such as by increasing the Schottky contact length (greater than 1 micron)), the on-resistance will increase accordingly
In addition, traditional enhancement mode/depletion mode HEMTs will fail under high currents caused by the following reasons, in

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  • Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
  • Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
  • Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same

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Embodiment Construction

[0046] Various non-limiting embodiments of the systems, methods, and devices presented herein provide electronic devices that can operate at (1) high power levels; (2) high temperatures; and (3) noisy environments while having enhanced performance, such as Power converters; motor drive circuits; audio amplifiers; interfaces related to internal combustion engines, aviation applications, electronics for oil and gas logging, etc.

[0047] In the following description, various specific details are set forth to provide a thorough understanding of the embodiments. However, one skilled in the art will recognize that the techniques described herein may be practiced without one or more of the specific details, that is, with other methods, components, materials, etc. In other instances, known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0048] For simplicity and clarity of description, some of the drawings illustrate th...

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Abstract

The invention provides transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same. A heterostructure semiconductor transistor can include a III-N-type semiconductor heterostructure including a barrier layer overlying an active layer and a hybrid electrode region including a hybrid drain electrode region. Further, a heterostructure semiconductor rectifier can include a III-N-type semiconductor heterostructure and a hybrid electrode region including a hybrid cathode electrode region. Furthermore, the hybrid electrode region of the transistor and rectifier can include permanently trapped charge located under a Schottky contact of the hybrid electrode region.

Description

[0001] This application claims U.S. Provisional Patent Application No. 61 / 213,895, entitled "AlGaN / GaN DUAL-CHANNEL LATERAL FIELD-EFFECT RECTIFIER WITH PUNCH-THROUGH BREAKDOWN IMMUNITY AND LOW ON-RESISTANCE," filed July 27, 2009 and filed at Priority to U.S. Provisional Patent Application No. 61 / 348,976, entitled "AlGaN / GaN DUAL-CHANNEL LATERAL FIELD-EFFECT RECTIFIER WITH PUNCH-THROUGH BREAKDOWN IMMUNITY AND LOW ON-RESISTANCE," filed May 27, 2010. The entire content of the above application is hereby incorporated by reference in its entirety. technical field [0002] The present invention generally relates to III-nitride power devices and methods of fabrication thereof, including but not limited to III-nitride semiconductor transistors and rectifiers with mixed electrodes and related fabrication methods. Background technique [0003] III-Nitride-type (“III-N”) compound semiconductor materials, including GaN (gallium nitride), have wide bandgap, high breakdown voltage, and A...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/40H01L29/778H01L21/335
CPCH01L29/66212H01L29/42312H01L29/2003H01L29/7786H01L29/872H01L29/1029H01L29/66462H01L29/205H01L21/28575H01L29/41725
Inventor 周春华陈敬
Owner THE HONG KONG UNIV OF SCI & TECH
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