Method for improving dispersibility of silicon carbide mortar

A technology with dispersive performance and high dispersibility, which is applied in the petroleum industry, additives, lubricating compositions, etc. It can solve the problems of poor dispersibility and redispersibility of mortar, facilitate equipment cleaning and recycling and reprocessing, and improve dispersion Performance, the effect of improving redispersibility

Active Publication Date: 2011-02-23
LIAONING OXIRANCHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the defects of poor dispersibility and redispersibility of the existing mortar, the present invention provides a method for modifying silicon carbide micropowder, which improves the dispersibility and

Method used

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  • Method for improving dispersibility of silicon carbide mortar
  • Method for improving dispersibility of silicon carbide mortar

Examples

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Embodiment 1

[0031] The silicon carbide micropowder (1200 # ) and 333g of water and mix well. At 60°C, add 25g of sodium octylsulfonate to the system, stir for 30min, then wash with water until the pH of the silicon carbide aqueous solution is 5.8, and then dry it. The mortar A was formulated with the cutting fluid OX-Si205 at a mass ratio of 1:1, and the dispersion and redispersion properties of the mortar are shown in Table 1.

Embodiment 2

[0033] With 500g new silicon carbide micropowder (1500 # ) and 500g of water, mix well, add 1g of sodium oxalate to the system at 40°C, stir for 60min, then wash with water until the pH of the silicon carbide aqueous solution is 4.8, and dry. Mortar B was formulated with cutting fluid OX-Si205 at a mass ratio of 1:1. The dispersion and redispersion properties of the mortar are shown in Table 1.

Embodiment 3

[0035] With 500g new silicon carbide micropowder (1500 # ) and 1166g of water, and stir evenly. At 50°C, add 5g of potassium succinate to the system, stir for 80min, then wash with water until the pH of the silicon carbide aqueous solution is 5.3, and dry. Mortar C was formulated with cutting fluid OX-Si205 at a mass ratio of 1:1. The dispersion and redispersion properties of the mortar are shown in Table 1.

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Abstract

The invention provides a method for improving the dispersibility of silicon carbide mortar. The method comprises the following steps of: adding a dispersant which is in the mass of 0.001 to 10 percent of that of silicon carbide into 20 to 80 weight percent of a silicon carbide aqueous solution system at the temperature of between 20 and 70 DEG C; stirring for 30 to 120 minutes; after washing withwater, controlling the pH of the silicon carbide aqueous solution to be between 3 and 8; and drying to obtain high-dispersibility and high-redispersibility silicon carbide micro powder. The silicon carbide powder processed by the method of the invention is used for cutting monocrystalline silicon and polycrystalline silicon, can effectively shorten the preparation time of cutting fluid mortar, and solves the problem that the silicon carbide micro powder is difficult to redisperse in a cutting or recovering process.

Description

technical field [0001] The invention relates to the production or recovery process of silicon carbide micropowder for crystalline silicon wire cutting, in particular a method for improving the dispersion performance of silicon carbide mortar. Background technique [0002] During the processing of silicon wafers, cutting silicon rods into sheets of different diameters and thicknesses through special wire cutting equipment is a common way in the world at present. The cutting process needs to use silicon carbide with high hardness, small particle size and concentrated particle size distribution as the main cutting medium, and add polyethylene glycol-based or oil-based cutting fluid as the main raw material in a certain proportion, and make it into mortar before use cutting. [0003] The dispersion of silicon carbide in the cutting fluid (mortar) directly affects the cutting quality and cutting efficiency of silicon wafers. At present, the negative effects caused by poor morta...

Claims

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Application Information

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IPC IPC(8): C10M141/08C10M177/00C10M141/12C10M161/00
Inventor 朱建民刘兆滨董振鹏仲崇纲富扬
Owner LIAONING OXIRANCHEM INC
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