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Composite phase change storage material and method for preparing composite phase change storage material film

A technology of composite phase change and storage materials, applied in the field of semiconductors, to achieve the effects of improving data retention, reducing heat waste, and improving efficiency

Active Publication Date: 2011-03-09
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although size reduction will also be accompanied by challenges such as data retention capabilities, in general, phase change memory has obvious technical and cost advantages after the 45nm technology node

Method used

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  • Composite phase change storage material and method for preparing composite phase change storage material film

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Embodiment 1

[0025] According to research, specific nitrides have good dispersion with certain phase change materials, that is, at high temperature, the materials are dispersed and immiscible with each other, and nitrides will not enter the crystal of phase change materials like other materials. In addition, the specific nitride has good thermal insulation performance, insulation performance and thermal stability, which can effectively improve the heating efficiency of the electrode to the storage material and improve the stability of the material. Based on the above research results, we propose a nitride composite phase change material, which is composed of nitride and phase change material, and has a reversible phase change ability under the action of an electric signal. The two materials are mutually dispersed. But they don't dissolve each other. Such recombination effectively limits the grain size of the phase change material, improves the crystallization temperature and data retention...

Embodiment 2

[0035] The following describes the preparation method of this kind of composite film, which is realized by physical deposition, using silicon nitride and Sb respectively 2 Te 3 Alloy phase change material targets, through common deposition, composite material thin films are obtained on a single substrate.

[0036] Through the control of the physical deposition rate, in the thin film of the composite material, the molar percentage of silicon nitride in the thin film is 3%, obviously the molar percentage of silicon nitride can be 1 / 1000 to 20%. Any value between the two, as described in Embodiment 1. To increase the content of silicon nitride in the material, the deposition rate of silicon nitride can be increased, the deposition rate of phase change material can also be decreased, or the above two methods can be used at the same time; and vice versa. Different content of silicon nitride will lead to different properties of composite materials, for example, after the content o...

Embodiment 3

[0039] This embodiment discloses a method for preparing a nitride composite phase-change storage material by chemical vapor deposition. The method includes the following steps:

[0040] (1) Select a reactive gas source to deposit silicon nitride in chemical vapor deposition, select another reactive gas source to simultaneously deposit germanium nitride, and select a gas source for depositing phase-change storage materials. Obviously, other types of nitrides and phase-change storage materials can also be selected, and one or more gas sources can be selected for preparing nitrides; the same is true for the gas sources for depositing phase-change materials.

[0041] (2) Feed in reaction gas, realize film growth at a certain substrate temperature, and prepare nitride composite phase change storage material by forming silicon nitride, germanium nitride and phase change material.

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Abstract

The invention discloses a composite phase change storage material and a preparation method thereof. The composite phase change storage material is compounded of a nitride and a phase change material. The composite phase change storage material is capable of realizing reversible phase change and reversible resistance conversion under the action of external energy. In the composite phase change storage material, the nitride and the phase change material are dispersed to each other, so that two or more phases are present in the materials. The nitride composite phase change storage material of the invention is compounded of the nitride and the phase change material. The introduction of the nitride can limit the growth of the crystal grain of the phase change material through incompatible dispersion, increases the crystallization temperature of the material and improves data retention. Due to higher resistivity and better adiabaticity of the nitride, the heating efficiency of the material is significantly improved and the thermal diffusion ratio is significantly reduced. The working efficiency of a device is improved, and the power consumption is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a composite phase-change storage material, in particular to a composite phase-change storage material for memory; meanwhile, the invention also relates to a method for preparing a thin film of the composite phase-change storage material. Background technique [0002] Phase-change memory is recognized by the industry as the most popular next-generation non-volatile general-purpose memory. It is expected to obtain large-scale commercial applications in the near future, thereby beginning to gradually replace the current mainstream memories and occupy a considerable market share. . [0003] The reason why phase-change memory has become a popular next-generation high-performance memory is that it has superior comprehensive performance: phase-change memory has a simple structure and manufacturing process, and is basically compatible with standard CMOS processes. , erasable times a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 宋志棠张挺饶峰吴良才宋三年
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI