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Tunable capacitor and switch using mems with phase change material

A technology of phase change materials and dielectric materials, applied in the field of MEMS, can solve the problems of MEMS, large capacitor size, high tunability, etc.

Active Publication Date: 2011-04-06
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, prior art semiconductor devices comprising MEMS, top and bottom electrodes, and optionally at least one tunable capacitor still suffer from various disadvantages
[0013] First, MEMS do not have high tunability
[0014] Also, prior art capacitors and MEMS have relatively large size

Method used

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  • Tunable capacitor and switch using mems with phase change material
  • Tunable capacitor and switch using mems with phase change material
  • Tunable capacitor and switch using mems with phase change material

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Embodiment Construction

[0075] Figure 1 shows the temperature dependence on the volume of phase change materials .

[0076] AgInSbTe, Ge 2 Sb 2 Te 5 and Ge 4 Sb 1 Te 5 The film thickness is a function of increasing annealing temperature. Crystallization leading to a sudden decrease in film thickness was observed at 155 °C for AgInSbTe and for Ge 2 Sb 2 Te 5 Observed at 130°C, for Ge 4 Sb 1 Te 5Observed at 170°C. To facilitate comparison of different data sets, all thicknesses were normalized relative to the thickness of the as-deposited films. Crystallization leads to a 5.5% reduction in the thickness of AgInSbTe, Ge 2 Sb 2 Te 5 The thickness is reduced by 6.5%, Ge 4 Sb 1 Te 5 The thickness is reduced by 9%.

[0077] Figure 2a shows the structure of the proposed tunable capacitor, a single beam structure. (X section).

[0078] Figures 2a, 2b show X-sectional views of the proposed structure. The beams are supported by dielectric insulation, which may be a sacrificial layer inten...

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Abstract

The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using are given.

Description

technical field [0001] The present invention relates to a MEMS developed for eg mobile communication applications (eg switches, tunable capacitors, tunable filters, phase shifters, multiplexers, voltage controlled oscillators, and tunable matching networks). The volume change of the phase change layer is used for bistable actuation of MEMS devices. A MEMS device includes at least a bendable cantilever, a phase change layer and electrodes. The technology and usage of the device are given. [0002] An example of the prior art is a capacitive RF MEMS switch, which can achieve a relatively large change in capacitance due to a change in distance or area between electrodes. However, these require controlled actuators and are slow to respond. Another example is tunable capacitors using ferroelectric or paraelectric materials. The dielectric constant of these materials can be tuned by applying an electric field. Although these have a fast response to electric fields, the tuning r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G5/18H01L21/00H01H59/00B81C1/00
CPCH01G5/18B81B2201/0221B81B2203/0118B81B3/0072H01H1/0094B81C2201/0167
Inventor 古川有纪子克罗斯·赖曼克里斯蒂娜·安德利娜·瑞德斯彼得·G·斯蒂内肯莱斯伯·范彼得森刘瑾弗里斯科·J·耶德玛
Owner NXP BV
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