Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing silicon oxide nitride oxide semiconductor (SONOS) flash memory by using aluminum oxide as tunneling dielectric film

A technology of dielectric film and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as the influence of data retention ability, and achieve the effects of improving reliability, increasing physical thickness, and increasing erasing speed

Active Publication Date: 2011-05-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The tunnel oxide layer of ordinary SONOS flash memory devices is generally a thermal oxide layer. In order to achieve a higher erase and write speed, the thickness of the thermal oxide layer is generally thinner, which affects the data retention capability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon oxide nitride oxide semiconductor (SONOS) flash memory by using aluminum oxide as tunneling dielectric film
  • Method for preparing silicon oxide nitride oxide semiconductor (SONOS) flash memory by using aluminum oxide as tunneling dielectric film
  • Method for preparing silicon oxide nitride oxide semiconductor (SONOS) flash memory by using aluminum oxide as tunneling dielectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] see Figure 7 As shown, in an embodiment of the present invention, the method in which the SONOS flash memory device adopts aluminum oxide as the tunneling dielectric film comprises the following steps:

[0018] Step one, combine figure 1 As shown, the surface of the silicon wafer 1 is nitrided, for example, a nitride layer 2 is formed on the surface of the silicon wafer 1 by a high-temperature ammonia gas annealing process. The temperature of the high temperature annealing is 400° C. to 1000° C., and the annealing pressure is 10 mtorr to 760 torr. Nitriding the surface of the silicon wafer 1 is mainly used to reduce the leakage problem that may be caused by the high dielectric constant aluminum oxide used as the tunneling dielectric film.

[0019] Step two, combine figure 2 As shown, an aluminum oxide layer 3 is grown on a nitride layer 2 on the surface of a silicon wafer 1 by atomic layer deposition (ALD) as a tunneling dielectric film. When implementing the ato...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The method discloses a method for preparing a silicon oxide nitride oxide semiconductor (SONOS) flash memory by using aluminum oxide as a tunneling dielectric film. The method comprises the following steps of: nitriding the surface of a silicon wafer through high-temperature ammonia annealing to form a nitrided layer; growing an aluminum oxide layer serving as the tunneling dielectric film on the nitrided layer on the surface of the silicon wafer; forming a silicon nitride trap layer on the tunneling dielectric film, performing in-situ doping on the silicon nitride trap layer to form a silicon oxynitride admixture layer serving as a medium for storing charge; and preparing a charge blocking thermal oxidation layer on the silicon oxynitride admixture layer. The method can effectively improve the data storage reliability of the SONOS flash memory; moreover, the process is simple, the SONOS flash memory is easy to integrate, and the method can be used for mass production.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for manufacturing a SONOS flash memory device using aluminum oxide as a tunneling dielectric film. Background technique [0002] Since SONOS (polysilicon-upper oxide-nitride-lower oxide-single crystal silicon structure) flash memory device has good scaling characteristics and radiation resistance characteristics, it has become one of the main types of flash memory devices at present. SONOS flash memory devices are also facing many problems in application. Among them, there are two main issues related to reliability: one is the electrical erasing endurance (Endurance) characteristic, which is to measure the degradation of the device characteristics of the SONOS flash memory device after multiple programming / erasing. The second is the data retention (Data Retention) feature, which is the data retention capability of SONOS flash memory devices. The tunnel ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L21/8247
Inventor 杨欣孙勤
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com