Preparation method of selective emitter solar battery
A solar cell and emitter technology, which is applied in the field of solar energy applications, can solve the problems of strong toxicity and corrosiveness of ammonium bifluoride, low production efficiency, mass production, and low equipment investment, and achieves the effects of reducing production costs and improving production efficiency.
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[0022] The preparation method of the selective emitter solar cell of the present invention, such as figure 1 shown, including:
[0023] S11, removing the damaged layer on the surface of the silicon substrate;
[0024] S12, printing a mask layer with electrode windows on the surface of the silicon substrate by screen printing technology.
[0025] The preparation method embodiment of the present invention uses screen printing technology to prepare the mask layer, which overcomes the disadvantage of expensive photolithography technology, effectively reduces production cost, improves production efficiency, and is suitable for mass production. Moreover, no corrosive agent is used in the process, which is safe and environmentally friendly.
[0026] Screen printing technology is to use photosensitive materials to make screen printing plates by means of photographic plate making (so that the screen holes of the graphic part on the screen printing plate are through holes, and the scr...
Embodiment 1
[0029] Fig. 2(a) is a process flow diagram of this embodiment, and Fig. 2(b) is an implementation effect diagram corresponding to the process flow in Fig. 2(a). In this embodiment, after the surface treatment of the silicon substrate, the silicon substrate (hereinafter referred to as the silicon substrate) is doped by thermal diffusion method, and light phosphorus is first diffused to form a lightly doped region, and then printed SiO 2 The mask layer is used to diffuse the dense phosphorus in the electrode window region to form a heavily doped region, as shown in Figure 2 (a) and (b), this embodiment includes the following steps:
[0030] S21, removing the surface damage of the silicon substrate, forming a surface anti-reflection structure and performing chemical cleaning, see S21′ for the implementation effect;
[0031] S22, evenly coating low-concentration phosphorus slurry on the surface of the silicon substrate for thermal diffusion, to realize light doping on the surface...
Embodiment 2
[0039] Fig. 3(a) is a process flow diagram of this embodiment, and Fig. 3(b) is an implementation effect diagram corresponding to the process flow in Fig. 3(a). This embodiment is basically the same as Embodiment 1. The light and heavy doping of different regions still adopts the method of thermal diffusion, but the difference is that SiO is first printed on the surface of the silicon substrate. 2For the mask layer, the electrode window area is heavily doped by diffusion of concentrated phosphorus, and then diffused with light phosphorus to form a lightly doped region. As shown in Figure 3 (a) and (b), this embodiment includes the following steps:
[0040] S31, removing the surface damage of the silicon substrate, forming a surface anti-reflection structure and performing chemical cleaning, see S31′ for the implementation effect;
[0041] S32, using screen printing technology, using SiO 2 For printing paste, SiO with electrode windows is screen-printed on the non-electrode a...
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