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Film production method and storage medium

A film-forming method and film-forming technology, which can be used in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as increasing C concentration, and achieve the effect of inhibiting the increase of residual C concentration.

Inactive Publication Date: 2011-06-08
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when using the above Sr(C 5 (CH 3 ) 5 ) 2 When such a cyclopentadiene compound is used as an organometallic compound, due to the low vapor pressure, for example, Sr(C 5 (CH 3 ) 5 ) 2 When forming the SrO layer, if the ALD sequence is repeated many times, it may be difficult to remove the remaining Sr organic compound in the center of the semiconductor wafer, resulting in an increase in the concentration of C remaining in the film.

Method used

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  • Film production method and storage medium

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no. 1 approach

[0045] In the first embodiment, as the Sr raw material, a compound that generates CO by decomposing an organic ligand with an oxidizing agent is used, and gaseous O is used as the oxidizing agent. 3 Or O 2 On this premise, the problem of residual C generated at this time is eliminated. As Sr raw materials use compounds with low vapor pressure and easy decomposition of organic ligands with oxidants to generate CO, such as Sr(C 5 (CH 3 ) 5 ) 2 :Bis(pentamethylcyclopentadienyl)strontium: Bis(pentamethylcyclopentadienyl)strontium or Sr(DPM) 2 : Bis(di-tert-valerylmethanato)strontium: Cyclopentadiene compounds such as Bis(dipivaloylmethanato)strontium, or Sr(NH 2 ) 2 : In the case of an amide compound such as strontium diamide, C is likely to remain in the formed film. Therefore, the present embodiment is particularly effective in solving the problem of residual C.

[0046] Therefore, in this embodiment, an alkoxide such as Ti(OiPr) is used as the Ti raw material 4 : Tetra(isopropoxy) t...

Embodiment 1-1

[0064] Above figure 1 In the film forming apparatus, the power of the lamp is adjusted, the temperature of the mounting table is set to 300°C, and the pressure of the film formation is 290°C for 200mm Si wafers. The arms of the transfer robot are used to transfer the Si wafers into the processing container to form Sr -Ti-O film. Use Sr(C 5 (CH 3 ) 5 ) 2 , Keep it in a container heated to 160°C, and supply Ar gas as a carrier gas to the processing container by a bubbling method. Use Ti (OiPr) as Ti raw material 4 , Keep it in a container heated to 45°C, and similarly supply Ar gas as a carrier gas to the processing container by the bubbling method. In addition, as an oxidant, use O in the ozone generator at 500 mL / min (sccm) 2 Gas, flow at 0.5mL / min (sccm) N 2 180g / m generated from gas 3 N concentration of O 3 .

[0065] In this way, after placing the Si wafer on the mounting table with the arm, dilute Ar gas is circulated at a flow rate of 300 mL / min (sccm), and the pressure in ...

Embodiment 1-2

[0072] Here, as the Sr raw material, Ti raw material, and oxidizing agent, the same materials as in Example 1-1 were used, and in the same manner as in Example 1-1, figure 1 The equipment is supplied under the same conditions except for the film formation sequence. Specifically, first, after placing the Si wafer on the mounting table by the arm in the same manner as in Example 1-1, dilute Ar gas was circulated at a flow rate of 300 mL / min (sccm), and the pressure in the processing container was set to 133 Pa ( 1 Torr), the Si wafer is heated to a film formation temperature of 290°C, and then diluted Ar gas is circulated at a flow rate of 300 mL / min (sccm), and the inside of the processing container is set to 40 Pa (0.3 Torr) for 10 seconds. Example 1-1 repeats the above steps 1 and 2 twice under the same conditions, then repeats the above steps 3 to 6 twice under the same conditions as in Example 1-1, and then repeats the same steps as in Example 1-1. Repeat the above steps 1 a...

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Abstract

An AxByOz-type oxide film can be produced by introducing a first organic metal compound raw material, a second organic metal compound raw material and an oxidizing agent into a treatment vessel and forming the AxByOz-type oxide film on a support. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizing agent and thereby producing CO is used as the first organic metal compound raw material, a metal alkoxide is used as the second organic metal compound raw material, and gaseous O3 or O2 is used as the oxidizing agent. It is absolutely necessary to introduce the second organic metal compound raw material immediately before the introduction of the oxidizing agent.

Description

Technical field [0001] The present invention relates to a film formation method and a storage medium for forming an AxByOz-type oxide film such as an Sr-Ti-O-based film. Background technique [0002] In semiconductor equipment, the high integration of integrated circuits is increasingly developed, and in DRAM, it is also required to reduce the area of ​​memory cells and increase the storage capacity. Corresponding to this requirement, MIM (metal-insulator-metal) capacitors have attracted attention. As the capacitor of this MIM structure, strontium titanate (SrTiO 3 ) And other high dielectric constant materials as the insulating film (dielectric film). [0003] As such as SrTiO 3 AxByOz-type high-dielectric oxide film formation method, in the past, mostly used organic metal compound raw materials containing each metal and an oxidizing agent, and the ALD method was used to form a film on a substrate such as a semiconductor wafer (for example, JHLee etc. "Plasma enhanced atomic lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316C23C16/40H01L21/31H01L21/8242H01L27/108
CPCC23C16/45531H01L21/31691H01L28/55C23C16/409H01G4/1227H01L21/02197H01L21/0228H01L21/02189H01L21/28556
Inventor 河野有美子有马进柿本明修广田俊幸清村贵利
Owner TOKYO ELECTRON LTD
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