Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Coupling device for semiconductor stripe laser diode (LD) and single mode fiber (SMF)

A technology of laser diode and single-mode fiber, which is applied in the field of laser coupling, can solve the problems of short optimal distance (generally only a few microns, great influence on coupling efficiency, and difficulty in effective coupling), so as to solve the problem of complex structure and improve coupling efficiency , the effect of efficient coupling

Inactive Publication Date: 2011-06-29
BEIJING JIAOTONG UNIV
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a significant difference between the LD exit light field characteristics and the SMF mode field characteristics, and direct coupling will inevitably cause a large loss. Therefore, the effective coupling of the two has always been a difficult point in this field.
Due to its own structure, microlens fiber usually has the characteristics of high simplicity, easy operation, and easy packaging. However, there is an obvious defect in this solution, that is, its effective working distance is small, that is, the distance between the semiconductor laser and the microlens fiber The optimal distance between them is short (generally only a few microns), in this case the alignment of the system has a great influence on the coupling efficiency, and the tolerance is small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Coupling device for semiconductor stripe laser diode (LD) and single mode fiber (SMF)
  • Coupling device for semiconductor stripe laser diode (LD) and single mode fiber (SMF)
  • Coupling device for semiconductor stripe laser diode (LD) and single mode fiber (SMF)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Consider the case of magnification of 10 (easy to couple with elliptical core graded index fiber), namely |M T |=10, the other corresponding parameters are: l 1 =10μm, l 2 =100μm, f 1 =10μm, f 2 =100μm. Select LD parameter: ω 0x =2.6μm, ω 0y =0.7μm, the beam waist of the elliptical Gaussian beam incident on the surface of the elliptical core graded-index fiber after being transformed by the focusing telescope system is ω′ 0x =26μm,ω′ 0y =7μm, still an elliptical Gaussian beam.

[0051] After optimization and calculation, the elliptical core graded index fiber is taken as its semi-major axis a x =45μm, semi-minor axis a y =15μm, n 0 = 1.46, n 1 = 1.45. Using Corning's SMF-28 single-mode fiber, its mode field diameter at 1.55μm is 3.13μm.

[0052] figure 2 In order to change the light spot of the incident elliptical Gaussian beam in the EGIF after being transformed by the focusing telescope system, since the length of the long axis of the EGIF is 3 times the length of the sho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a coupling device for a semiconductor stripe laser diode (LD) and a single mode fiber (SMF). The coupling device comprises the semiconductor stripe LD, a focusing telescope system, an elliptical graded index fiber (EGIF) and the SMF, wherein, the EGIF has a long axis direction and a short axis direction, the long axis direction is consistent with that of the parallel active layer of the semiconductor LD, and the short axis direction is consistent with that of the vertical active layer of the semiconductor LD. The coupling device has the advantages that the problems such as complex structure, difficulty in manufacture and the like of a lens caused by realizing efficient coupling between the LD and the SMF only by utilizing a lens system are effectively solved; and by adopting the EGIF, a light field which is coupled into the SMF after shaping transformation can also obtain efficient coupling in the event that the light field is in an incomplete circular shape.

Description

Technical field [0001] The present invention relates to the technical field of laser coupling, in particular to a coupling device of a semiconductor strip laser diode and a single-mode optical fiber. Background technique [0002] The 21st century is the era of global information integration. The advancement of optical fiber communication technology is due to the rapid development of the Internet. The coupling problem between the semiconductor laser as an important signal light source in the optical communication field and the optical fiber as the signal transmission carrier has become increasingly important. The commonly used semiconductor strip laser diode (LD) has different far-field divergence angles along the vertical active layer and parallel active layer directions due to its own structural characteristics. In the near field, the size of the light-emitting area of ​​the strip laser diode is generally within 1 μm×10 μm, the spot radius in the direction perpendicular to the a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/42G02B6/028
Inventor 延凤平刘鹏李琦陶沛琳冯亭彭万敬梁骁
Owner BEIJING JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products