Method for manufacturing silicide alignment block (SAB) film of p-type metal-oxide semiconductor (PMOS) device

Abstract

The invention discloses a method for manufacturing silicide alignment block (SAB) film of a p-type metal-oxide semiconductor (PMOS) device, which is used in the process for covering a non-silicide device. The method comprises the following steps: defining an active area and an isolation area on a semiconductor substrate; sequentially forming a gate oxide layer, a polysilicon gate and side wall layers positioned on the two sides of the gate oxide layer and the polysilicon gate on the surface of the active area; doping the active area with the polysilicon gate and the side wall layers as mask, and performing ion implantation of boron fluoride (BF2) to form a source-drain region; performing high-temperature thermal annealing treatment to repair the doped crystal lattices of the source-drain region; forming the SAM film by using chemical vapor deposition method, which covers the active area, the isolation area and the polysilicon gate and has a thickness of 15-250 angstroms; and etching the SAB film to form an SAB film pattern. The method provided by the invention effectively prevents bubble defect on the surface of the SAB film of the PMOS device, and the U-defect of metal silicide.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing process, in particular to a method for manufacturing a self-aligned silicide barrier film of a PMOS device. Background technique [0002] At present, with the development of semiconductor devices, such as the development of metal oxide semiconductor field effect transistors (MOSFET), self-aligned metal silicides such as self-aligned nickel silicon, titanium silicon methods are introduced to produce silicide , can be well aligned with the exposed source, drain and silicon (Si) of the polysilicon gate. This is because metal Ni or Ti can react with silicon, but not with silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitride (Si 3 N 4 ) or silicon oxynitride (SiON) reaction. Therefore, Ni or Ti will only find the part of silicon to react, and for silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitride (Si 3 N ...

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Problems solved by technology

[0015] However, the thicker SAB film requires a longer time for dry plasma etching and wet DHF etching, and the speed of DHF etching silicon oxide is faster than that of the semiconductor substrate, resulting in the severe reduction of the height of STI (STI loss ), that is, the height of the upper surface of the STI will be lower than the semiconductor substrate 10

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