Photoresist detergent composition
A cleaning agent and composition technology, applied in the processing of photosensitive materials, etc., can solve the problems of strong corrosion of semiconductor wafer patterns and substrates, insufficient cleaning ability of thick-film photoresist, and harmful environment, so as to inhibit corrosion dark spots, Conducive to environmental protection, the effect of inhibiting corrosion
Inactive Publication Date: 2011-07-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF7 Cites 6 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0016] The technical problem to be solved by the present invention is to provide a photoresist cleaning agent for the defects that the existing photoresist cleaning agent has insufficient cleaning ability for thick film photoresist, is highly corrosive to semiconductor wafer patterns and substrates, and is harmful to the environment. Photoresist cleaning agent composition with strong resist cleaning ability, low corrosion to semiconductor wafer patterns and substrates, and environmental protection
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1～26
[0046] Table 1 shows the formulations of the photoresist cleaning composition examples 1 to 26 of the present invention. According to the components listed in Table 1 and their contents, simply mix them uniformly to prepare the cleaning compositions.
[0047] Table 1 Photoresist cleaning agent composition embodiment 1~26 of the present invention
[0048]
[0049]
[0050]
[0051]
[0052] The beneficial effects of the present invention will be further described below through preferred effect embodiments of the present invention.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a photoresist detergent composition, which comprises quaternary ammonium hydroxides, water, alkyl diol ether, dimethyl sulfoxide, a corrosion inhibitor and surfactants. The photoresist detergent composition can remove the photoresist (particuarly thick film negative photoresist) with a thickness of over 20 micrometers on the metals, metal alloys or dielectric medium substrates, and other etching residues, and meanwhile, the composition has low causticity to the metals such as aluminum, copper and the like and the nonmetallic materials such as silicon dioxide and the like, thus, the composition has good application prospect in the micro-electronics fields such as semiconductor chip cleaning, and the like.
Description
technical field [0001] The invention relates to a cleaning agent composition in a semiconductor manufacturing process, in particular to a cleaning agent composition containing quaternary ammonium hydroxide, water, alkyl glycol aryl ether, dimethyl sulfoxide, corrosion inhibitor and surfactant Photoresist cleaner compositions. Background technique [0002] In a common semiconductor manufacturing process, a coating of photoresist is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. Remove the exposed or unexposed part of the photoresist, form a photoresist pattern at the required position, and then perform plasma etching or reactive gas etching on the photoresist pattern to perform pattern transfer. The low temperature and fast cleaning process is an important development direction of the semiconductor wafer manufacturing process. Negative photoresists with a thickness of...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G03F7/42
Inventor 王淑敏俞昌肖正龙
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD