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Preparation method of p-CuO/n-CdS/ZnS composite semiconductor photochemical catalyst

A compound semiconductor and photocatalyst technology, applied in the field of photocatalytic materials, can solve problems such as ineffective effects, achieve the effects of reducing photocorrosion, improving photocatalytic efficiency, and increasing specific surface area

Inactive Publication Date: 2011-07-20
NANJING FORESTRY UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for modifying CdS mainly include: ①precious metal deposition; ②recombination with wide bandgap semiconductors (such as CdS and TiO 2 composite, CdS and ZnO composite); ③ carrier loading (such as CdS loading on SiO 2 above), etc., but the effect is not obvious

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Preparation of CdS / ZnS solid powder:

[0031] Anhydrous ammonium sulfate: 20%

[0032] Anhydrous cadmium sulfate: 4.3%

[0033] Anhydrous zinc sulfate: 11.6%

[0034] Thiourea: 10.5%

[0035] Deionized water: 53.6%

[0036] Preparation of CdS / ZnS solid powder: According to the above mass percentage, mix anhydrous ammonium sulfate, anhydrous cadmium sulfate, anhydrous zinc sulfate, thiourea and deionized water, and pre-react in a microwave reactor with a power of 100W for 2h , then at a frequency of 30KH Z , Under ultrasonic dispersion with a power of 1000W, react at 80°C for 8 hours, and then filter to obtain a solid powder cake. The solid powder cake is added to deionized water 15 times its mass, washed, ultrasonically dispersed, filtered and dried. After repeating this three times, the solid powder cake Then roast at 200°C for 4h under the protection of nitrogen, roast at 300°C for 4h, roast at 400°C for 4h, roast at 500°C for 4h, cool and grind to obtain CdS / ZnS...

Embodiment 2

[0044] Preparation of CdS / ZnS solid powder:

[0045] Anhydrous Ammonium Chloride: 22%

[0046] Anhydrous cadmium chloride: 2.5%

[0047] Anhydrous Zinc Chloride: 11.2%

[0048] Thiourea: 13%

[0049] Deionized water: 51.3%

[0050] Preparation of CdS / ZnS solid powder: According to the above mass percentage, mix anhydrous ammonium chloride, anhydrous cadmium chloride, anhydrous zinc chloride, thiourea and deionized water in a microwave reactor with a power setting of 100W Pre-reaction for 2h, then at a frequency of 30KH Z , Under ultrasonic dispersion with a power of 1000W, react at 80°C for 8 hours, and then filter to obtain a solid powder cake. The solid powder cake is added to deionized water 15 times its mass, washed, ultrasonically dispersed, filtered and dried. After repeating this three times, the solid powder cake Then roast at 200°C for 4h under the protection of nitrogen, roast at 300°C for 4h, roast at 400°C for 4h, roast at 500°C for 4h, cool and grind to obtai...

Embodiment 3

[0058] Preparation of CdS / ZnS solid powder:

[0059] Trimethylamine Sulfate: 10%

[0060] Anhydrous cadmium acetate: 2.3%

[0061] Anhydrous zinc acetate: 16%

[0062] Thiourea: 14.8%

[0063] Deionized water: 56.9%

[0064] Preparation of CdS / ZnS solid powder: According to the above mass percentage, mix trimethylamine sulfate, anhydrous cadmium acetate, anhydrous zinc acetate, thiourea and deionized water, and pre-react in a microwave reactor with a power of 100W for 2h , then at a frequency of 30KH Z , Under ultrasonic dispersion with a power of 1000W, react at 80°C for 8 hours, and then filter to obtain a solid powder cake. The solid powder cake is added to deionized water 15 times its mass, washed, ultrasonically dispersed, filtered and dried. After repeating this three times, the solid powder cake Then roast at 200°C for 4h under the protection of nitrogen, roast at 300°C for 4h, roast at 400°C for 4h, roast at 500°C for 4h, cool and grind to obtain CdS / ZnS solid pow...

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Abstract

The invention discloses a preparation method of a p-CuO / n-CdS / ZnS composite semiconductor photochemical catalyst, which comprises the steps of: firstly, with an ammonium salt, a zinc salt, a cadmium salt, thiocarbamide and deionized water as raw materials, sequentially carrying out treatments such as microwave reaction, ultrasonic dispersion, heating reaction, washing, ultrasonic dispersion, filtering, drying, roasting, grinding and the like to obtain CdS / ZnS solid powder; and secondly, with the CdS / ZnS solid powder, a copper salt, alkali and deionized water as raw materials, sequentially carrying out treatments such as reaction, ultrasonic dispersion, decompression distillation, thermal treatment, washing, ultrasonic dispersion, filtering, drying, roasting, grinding and the like to obtain the p-CuO / n-CdS / ZnS composite semiconductor photochemical catalyst. Through compounding a p-type semiconductor CuO with n-type semiconductor CdS and ZnS, oxidization of holes to the CdS can be effectively reduced, the light corrosion rate of the CdS is decreased; and photoproduced electronics are effectively separated from the holes, thus the service life of the CdS is prolonged, and the photochemical catalysis efficiency of the p-CuO / n-CdS / ZnS composite semiconductor photochemical catalyst is increased. The method is simple, convenient and practical, and is beneficial to popularization.

Description

technical field [0001] The invention relates to a preparation method of a p-CuO / n-CdS / ZnS composite semiconductor photocatalyst, belonging to the field of photocatalytic materials. Background technique [0002] With the deepening of the energy crisis and environmental crisis, the development and utilization of renewable energy has become a hot spot of global concern. Solar energy is the most abundant energy available to human beings. It is an inexhaustible, inexhaustible, pollution-free, cheap energy that can be used freely and peacefully by all countries in the world. It is also a variety of renewable energy such as biomass energy, wind energy, Ocean energy, water energy and other energy sources. For this reason, the governments of various countries attach great importance to the development and utilization of solar energy, and the development and utilization of solar energy has become a hot research field that governments have invested heavily in. [0003] Photocatalyst ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04A62D3/10C01B3/06
CPCY02E60/36
Inventor 刘福生李振刘忠祥李玲方婷朱涛卢南刘恋恋
Owner NANJING FORESTRY UNIV
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