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Electrolyte for electrochemical mechanical polishing of copper interconnecting layer and preparation method thereof

A mechanical polishing and electrochemical technology, which is applied in the field of electrolyte and its preparation for electrochemical mechanical polishing of copper interconnection layers, can solve the problems of poor surface quality and high surface roughness, and achieve improved surface quality, improved electric field conditions, The effect of improving selective dissolution removal ability

Inactive Publication Date: 2011-07-20
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide an electrolyte suitable for ultra-precision electrochemical mechanical polishing of copper interconnect layers under low pressure and a preparation method thereof, so as to solve the problem of poor surface quality of electrochemical mechanical polishing of copper interconnect layers under low pressure. Poor, high surface roughness value to meet the requirements of subsequent processing of integrated circuits

Method used

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  • Electrolyte for electrochemical mechanical polishing of copper interconnecting layer and preparation method thereof
  • Electrolyte for electrochemical mechanical polishing of copper interconnecting layer and preparation method thereof
  • Electrolyte for electrochemical mechanical polishing of copper interconnecting layer and preparation method thereof

Examples

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Effect test

Embodiment 1

[0027] An electrolytic solution for electrochemical mechanical polishing of copper interconnection layers and a preparation method thereof, comprising the steps of:

[0028] 1) According to the proportion of each component in deionized water: complexing agent: 40g / L, inhibitor: 3g / L, abrasive grain: 10g / L; dispersant: 10g / L; deionized water: 100ml; select Raw materials such as complexing agent, inhibitor, abrasive grain, dispersant and deionized water are used for standby;

[0029] The complexing agent is glycine; the inhibitor is thiosalicylic acid; the abrasive particles are rutile titanium dioxide; the dispersant is polyethylene glycol 1000.

[0030] 2) Add the complexing agent and inhibitor into the deionized water according to the above ratio, and stir evenly with a glass rod, so that each substance is fully dissolved in the deionized water;

[0031] 3) On the basis of the electrolyte that has been added with complexing agent and inhibitor, add abrasive particles and dis...

Embodiment 2

[0033] An electrolytic solution for electrochemical mechanical polishing of copper interconnection layers and a preparation method thereof, comprising the steps of:

[0034] 1) According to the proportion of each component in deionized water: complexing agent: 30g / L, inhibitor: 1g / L, abrasive grain: 10g / L; dispersant: 10g / L; deionized water: 100ml; select Raw materials such as complexing agent, inhibitor, abrasive grain, dispersant and deionized water are used for standby;

[0035] The complexing agent is glycine; the inhibitor is benzotriazole; the abrasive grain is rutile titanium dioxide; the dispersant is polyethylene glycol 1000.

[0036] 2) Add the complexing agent and inhibitor into the deionized water according to the above ratio, and stir evenly with a glass rod, so that each substance is fully dissolved in the deionized water;

[0037] 3) On the basis of the electrolyte that has been added with complexing agent and inhibitor, add abrasive particles and dispersant ac...

Embodiment 3

[0039] An electrolytic solution for electrochemical mechanical polishing of copper interconnection layers and a preparation method thereof, comprising the steps of:

[0040] 1) According to the proportion of each component in deionized water: complexing agent: 30g / L, inhibitor: 1g / L, abrasive grain: 20g / L; dispersant: 20g / L; deionized water: 100ml; select Raw materials such as complexing agent, inhibitor, abrasive grain, dispersant and deionized water are used for standby;

[0041] The complexing agent is oxalic acid; the inhibitor is thiosalicylic acid; the abrasive particles are anatase titanium dioxide; the dispersant is polyethylene glycol 600.

[0042] 2) Add the complexing agent and inhibitor into the deionized water according to the above ratio, and stir evenly with a glass rod, so that each substance is fully dissolved in the deionized water;

[0043] 3) On the basis of the electrolyte that has been added with complexing agent and inhibitor, add abrasive particles and...

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Abstract

The invention belongs to the technical field of ultra-precision finishing, and discloses an electrolyte for electrochemical mechanical polishing of a copper interconnecting layer and a preparation method of the electrolyte. The electrolyte is characterized in that benzotriazole, thiosalicylic acid, dodecyl ammonium sulfate and the like with good inhibitory effect are used as an inhibitor in the electrolyte; and rutile-type titanium oxide, anatase-type titanium oxide and the like with good dielectric properties are used as abrasive particles, and a proper amount of complexing agent and dispersant are added to prepare into the electrolyte. The prepared electrolyte can effectively inhibit further corrosion of the recesses on a finished surface, increase the electric field gradient in the vicinity of the finished surface, improve the selective dissolution removal capacity to the salient parts on the finished surface, improve the surface quality after polishing, and realize ultra-precision polishing of the copper interconnecting layer under low polishing pressure.

Description

technical field [0001] The invention belongs to the technical field of ultra-precision processing, and in particular relates to an electrolyte used for electrochemical mechanical polishing of a copper interconnection layer and a preparation method thereof. Background technique [0002] Microelectronics products continue to develop in the direction of high speed, high integration, high density and high performance, which promotes the rapid development of integrated circuit (IC) manufacturing technology. In order to improve the integration level of IC, the feature size is continuously reduced, and the number of wiring layers is continuously increased, but this results in RC delay effect. In order to reduce the RC delay effect, Low-k materials are used as insulating layers in metal interconnections instead of traditional SiO 2 Material. However, as the dielectric constant k value of the insulating layer material decreases, its mechanical strength will also decrease. When the ...

Claims

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Application Information

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IPC IPC(8): C25F3/22
Inventor 金洙吉王喆李伟思郭东明
Owner DALIAN UNIV OF TECH
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