Method for preparing silicon-on-insulator by ion implantation
A technology of silicon-on-insulator and ion implantation, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of thin buried oxygen layer thickness and poor insulation performance, and achieve the effect of improving the quality and improving the quality of the buried layer.
Inactive Publication Date: 2011-07-20
SHANGHAI SIMGUI TECH +1
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However, the thickness of buried oxide layer of SOI material prepared by low-dose SIMOX technology is relatively thin, and the insulation performance is poor.
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[0015] Next, specific implementations of a method for preparing a semiconductor substrate with an insulating buried layer according to the present invention will be described in detail with reference to the accompanying drawings.
[0016] Attached figure 1 Shown is a flow chart of the implementation steps of this method, including: step S10, providing a single crystal silicon substrate; step S11, implanting oxygen ions into the single crystal silicon substrate to form an oxygen-rich layer in the single crystal silicon substrate , And the device layer covering the surface of the oxygen-rich layer; step S12, the implanted monocrystalline silicon substrate is annealed for the first time in an oxygen-containing atmosphere to convert the oxygen-rich layer into an insulating buried layer and repair the device Implantation damage in the layer; step S13, the second annealing is performed on the implanted single crystal silicon substrate, also in an oxygen-containing atmosphere, and the ox...
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The invention relates to a method for preparing silicon-on-insulator by ion implantation. The method comprises the following steps: providing a monocrystalline silicon substrate; and implanting oxygen ion into the monocrystalline silicon substrate to form an oxygen-rich layer in the monocrystalline silicon substrate and a device layer covered on the surface of the oxygen-rich layer; annealing the implanted monocrystalline silicon for the first time; and annealing the implanted monocrystalline silicon for the second time, wherein the oxygen concentration in the atmosphere of the second annealing is higher than the oxygen concentration in atmosphere of the first annealing. In the method provided by the invention, two different annealing processes in which the first annealing process is used for forming an insulating buried layer and recrystallizing the device layer are adopted to repair lattice damage, the second annealing process increases the oxygen concentration in the atmosphere and is used for thickening the formed insulating buried layer and improving the quality of the buried layer. By adopting the two annealing processes with different oxygen concentrations, the method can effectively improve the quality of the buried layer of an SIMOX (separation by implanted oxygen) material.
Description
Technical field [0001] The invention relates to a method for preparing a silicon-on-insulator material, in particular to a method for preparing a silicon-on-insulator material by ion implantation. Background technique [0002] SOI (Silicon on Insulator, silicon on insulator) is a technology developed to meet the needs of space and military electronics such as aerospace, missile and satellite electronic systems. As a full dielectric isolation technology, SOI technology has many unparalleled advantages of bulk silicon technology, including: fast speed, low power consumption, small short channel effect, high integration, strong anti-interference and anti-radiation capabilities, etc. It has gradually become the mainstream technology for the production of high-speed, low-power, high-integration, and high-reliability ultra-large-scale integrated circuits. At the same time, it is also used in high-voltage power devices, optical passive devices, and MEMS (Micro-electro-mechanical-Systems...
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IPC IPC(8): H01L21/762H01L21/265H01L21/324
Inventor 魏星曹共柏张峰王曦
Owner SHANGHAI SIMGUI TECH