Luminous element and manufacturing method and luminous method thereof
A technology for light-emitting elements and manufacturing methods, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems of limited application of light-emitting thin film materials, low light-emitting efficiency, weak light-emitting brightness, etc., and achieve broad production and application prospects and improve internal quantum efficiency. , the effect of spontaneous emission enhancement
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Embodiment 1
[0040] Select the size as 1×1cm 2 A double-sided polished quartz light-transmitting substrate is formed on the light-transmitting substrate by magnetron sputtering 1.99 Ce 0.01 SiO 5 Luminescent thin film, then use magnetron sputtering equipment to deposit a metal silver layer with a thickness of 2nm on the surface of the film, and then place it in a vacuum of 1×10 -3 Under a vacuum environment of Pa, annealing treatment was performed at a temperature of 300° C. for 30 minutes, and finally cooled to room temperature to obtain the light-emitting element of this embodiment.
[0041] Figure 4 It is a comparison chart of the luminescence spectrum of the luminescent element of this embodiment and the luminescent film without metal layer using yttrium silicate doped with cerium system, wherein the test condition of the luminescence spectrum under cathode ray excitation is: the accelerating voltage of electron beam excitation is 5KV. Such as Figure 4 As shown, 11 is the lumine...
Embodiment 2
[0043] Select the size as 1×1cm 2 A double-sided polished quartz light-transmitting substrate is formed on the light-transmitting substrate by electron beam evaporation 1.998 Ce 0.002 SiO 5 Luminescent thin film, then using magnetron sputtering equipment to deposit a metal gold layer with a thickness of 0.5nm on the surface of the luminescent thin film, and then place it in a vacuum of 0.5×10 -3 Under a vacuum environment of Pa, annealing treatment was performed at a temperature of 200° C. for 60 minutes, and finally cooled to room temperature to obtain the light-emitting element of this embodiment.
Embodiment 3
[0045] Select the size as 1×1cm 2 A double-sided polished sapphire light-transmitting substrate, on which Y 1.995 Ce 0.005 SiO 5 Luminescent thin film, then use magnetron sputtering equipment to deposit a metal aluminum layer with a thickness of 200nm on the surface of the luminescent thin film, and then place it in a vacuum of 0.6×10 -4 Under a vacuum environment of Pa, annealing treatment was performed at a temperature of 500° C. for 300 min, and finally cooled to room temperature to obtain the light-emitting element of this embodiment.
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