Kyropoulos method for quickly growing large-size sapphire single crystal
A growth method, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of long growth cycle, low crystal yield, limited popularization and application, etc., and achieve short growth cycle and large growth crystal size , the effect of broad application prospects
Active Publication Date: 2011-08-03
HARBIN AURORA OPTOELECTRONICS TECH
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The invention provides a Kyropoulos method for quickly growing a large-size sapphire single crystal. Processes of charging, vacuumizing, heating for melting, auxiliary temperature field adjustment, crystal leading, shoulder extending, shoulder contracting, equal-diameter growth, pull-off, cooling annealing and discharging are finished in a growth furnace of the large-size sapphire single crystal. The Kyropoulos method for quickly growing the large-size sapphire single crystal is greatly improved on the basis of the conventional Kyropoulos method, and has the advantages of shorter growth period, larger size and higher quality of the grown crystal, higher yield of the crystal, lower unit production cost and the like.
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