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Underlayer film for image formation

An underlayer and image technology, applied in the field of underlayer film for image formation, achieves the effect of shortening process time and effective productivity

Active Publication Date: 2013-08-21
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in these examples, the amount of exposure to ultraviolet light is very large, so of course a long exposure process is required

Method used

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  • Underlayer film for image formation
  • Underlayer film for image formation
  • Underlayer film for image formation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0265] Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

[0266] [Determination of number average molecular weight and weight average molecular weight]

[0267] The number-average molecular weight (hereinafter referred to as Mn) and weight-average molecular weight (hereinafter referred to as Mw) of the polyimide precursor obtained according to the following synthesis example was determined by GPC (room temperature gel permeation chromatography) using the following equipment and measurement conditions Determination is performed and calculated as a polyethylene glycol (or polyethylene oxide) calibration value.

[0268]GPC device: Shodex (registered trademark) (GPC-101) manufactured by Showa Denko Co., Ltd.

[0269] Column: Showa Denko Co., Ltd. Shodex (registered trademark) (KD803, KD805 in series)

[0270] Column temperature: 50°C

[0271] Eluent: N,N-Dimethylformamide ...

Synthetic example 1

[0288] [Synthesis Example 1: Synthesis of diamine compound (DA-1: octadecyl 3,5-diaminothiobenzoate)]

[0289] 【Chemical 34】

[0290]

[0291] Under nitrogen atmosphere, compound [ii] (20.00g, 69.79mmol), tetrahydrofuran (155g) solution of triethylamine (8.07g, 79.76mmol) was cooled to below 10°C, and the compound was added dropwise while paying attention not to generate heat. [i] (15.33 g, 66.47 mmol) in tetrahydrofuran (70 g). After completion of the dropwise addition, the reaction temperature was increased to 23° C., and the reaction was further performed. After confirming the completion of the reaction with HPLC (high performance liquid chromatography), the reaction solution was introduced into distilled water (1.8 L), the precipitated solid was filtered, washed with water, and dispersed and washed with methanol (192 g) to obtain compound [iii] (yield: 26.4 g, yield: 83%).

[0292] 1 H-NMR (400MHz, CDCl 3 , δppm): 9.21-9.20 (1H, m), 9.07-9.06 (2H, m), 3.18 (2H, t),...

Synthetic example 2

[0295] [Synthesis Example 2: Synthesis of Polyimide Precursor (PI-1)]

[0296] Under nitrogen flow, 1.2621 g (0.003 mol) of octadecyl 3,5-diaminothiobenzoate (DA-1) prepared in Synthesis Example 1 was added to a 50 mL 4-necked flask, and dissolved to N-methyl Base-2-pyrrolidone (hereinafter referred to as NMP) 10.42g, then add 1,2,3,4-cyclobutanetetracarboxylic anhydride (hereinafter referred to as CBDA) 0.5766g (0.003mol), it is stirred at 23 ℃ After performing polymerization reaction for 10 hours, it diluted with NMP, and obtained the 8 mass % solution of the polyimide precursor (PI-1).

[0297] The number average molecular weight (Mn) and weight average molecular weight (Mw) of the obtained polyimide precursor (PI-1) were Mn=11,650, Mw=28,380, respectively.

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Abstract

An underlayer film for image formation, which is characterized by containing a polyimide precursor having a repeating structure represented by formula (1) or a polyimide obtained by dehydration ring closing of the polyimide precursor.  In the formula, A represents a tetravalent organic group, and B represents a divalent organic group represented by formula (2) or (3).

Description

technical field [0001] The present invention relates to an image-forming underlayer film, and particularly to an organic transistor manufactured using the image-forming underlayer film. Background technique [0002] At present, in the manufacturing process of electronic devices, in order to form the pattern of electrodes and functional thin films, the mask vapor deposition method and the etching method by photolithography are mainly used. These conventional methods have problems such as difficulty in increasing the size of the substrate and complicated steps. [0003] In recent years, it has been proposed to apply a separate coating technique utilizing the difference in wettability of liquids to the patterning of functional thin films for these conventional methods. In this method, a patterned layer including a region easily wetted by a liquid and a region not easily wetted by a liquid is formed on the surface of a substrate, and a liquid of a functional thin film forming m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786C08G73/10G03F7/004H01L21/288H01L21/312H01L21/3205H01L21/336H01L51/05H01L51/30
CPCH01L51/052H01L51/0097H01L21/312C08G73/10Y02E10/549H01L21/02118H01L21/02282H10K10/471H10K77/111G03F7/0045H01L21/02107H01L29/786H01L2029/7863
Inventor 前田真一小野豪南悟志
Owner NISSAN CHEM IND LTD