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Epoxy resin composition and semiconductor device
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A technology of epoxy resin and composition, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as damage, peeling component parts, lack of adhesion of silicon chips and passivation films, etc. , to achieve high reliability and high adhesion
Inactive Publication Date: 2011-10-12
SHIN ETSU CHEM IND CO LTD
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Problems solved by technology
However, conventional underfill material compositions lack adhesion to silicon chips and passivation films. During reflow soldering or temperature cycles, peeling occurs at the interface between semiconductor elements or substrates and underfill materials, and parts of the elements are partially damaged. Weaknesses become big problems
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preparation example Construction
[0094] Method for preparing the composition
[0095] The composition of the present invention is prepared by stirring, dissolving, mixing, and dispersing the above-mentioned (A) to (D) components and, if desired, simultaneously or separately heating the above-mentioned components. The equipment used for these operations is not particularly limited, and an attritor equipped with stirring and heating equipment, a 3-roll mill, a ball mill, a planetary mixer, and the like can be used. In addition, these devices can be combined appropriately to produce a composition.
[0096] Preferably, the epoxy resin composition of the present invention obtained in the above preparation method has a viscosity of 1 to 500 Pa·s, especially 1 to 150 Pa·s at 25°C. In addition, the said viscosity is the measured value with the rotational viscometer. As curing conditions of the above-mentioned composition, it is preferable to perform oven curing at 100 to 120° C. for 0.5 hours or more at first, an...
Embodiment 1～9
[0101] [Examples 1-9, Comparative Examples 1-9]
[0102] Preparation of the composition
[0103] Each component of each part by mass shown in Table 1 and Table 2 was uniformly kneaded with a 3-roller to obtain a composition (Examples 1-9, Comparative Example 1 ~9). In Table 1 and Table 2, each component is as follows.
[0105] A-1-1: Bisphenol F type epoxy resin (trade name: RE303S-L, manufactured by Nippon Kayaku (Co., Ltd.));
[0106] A-1-2: trifunctional epoxy resin represented by the following formula (trade name: Epicoat 630H, manufactured by Japan Epoxy Resin (Jiapan Epokisilesin) (strain));
[0114] A-2-2: An epoxy resin represented by the following formula,
[0115] [chem...
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Abstract
The invention discloses an epoxy resin composition with the flowing components (A)-(D) as the essential components thereof. (A) 100 parts of epoxy resin by mass; (B) amine curing agent; the ration of [the molar amount of epoxy in (A) component / the molar amount of group reactive with epoxy in (B) component] is 0.7-1.2; (C) 50-300 parts of inorganic filler by mass with the average particle diameter thereof 0.1-2 mu m and the maximum particle diameter thereof below 24 mu m; (D) 1-20 parts of organic silicon particles by mass with the average particle diameter thereof 0.1-10 mu m and the maximum particle diameter thereof below 24 mu m, which is formed by silicon rubber spherical particles coated with organic siloxanepolymer. The mass of the epoxy resin composition after being heated 30 minutes at 100 DEG C under a reduced pressure of 100-200 Pa is reduced less than 3% and the surface tension thereof is greater than 25 mN / m. Meanwhile, the composition and the semiconductor device are not separated from semiconductor elements and substrates, which are high in reliability without foaming even under a vacuum state.
Description
technical field [0001] The present invention relates to epoxy resin compositions and semiconductor devices. Background technique [0002] With the miniaturization, weight reduction and high performance of electrical equipment, semiconductor packaging methods have also developed from pin insertion type to surface packaging. Among them, flip chip (flip-chip) is a method of mounting a semiconductor chip by introducing a plurality of bumps on the wiring pattern surface of an organic substrate, and the underfill material is filled into the gap between the organic substrate and the semiconductor chip and the solder bumps. between the gaps. In the next generation, semiconductor devices with narrow bump pitches of 50 microns or less and large die sizes are being studied. In the next-generation flip-chip, it has been reported that semiconductor chips are packaged face-down by flip-chip connection on a circuit board (interposer) on which multilayer wiring is formed (Patent Document ...
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Application Information
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