Method for improving sapphire crystal ingot bar taking yield by utilizing 8-shaped cutting
A cutting method and sapphire technology, which are applied in the field of sapphire crystal ingot cutting and the yield of sapphire crystal ingots and rods obtained by using figure 8 cutting, can solve the problem of reducing the yield of sapphire crystal ingots and rods, affecting the processing accuracy of sapphire crystals, and improving processing and use. Cost and other issues, to achieve the effect of improving cutting efficiency, reducing processing costs, and improving yield
Active Publication Date: 2011-10-26
ECO POWER WUXI
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And to take out the operation of the secondary plane cutting of the sapphire crystal rod to obtain the orientation plane, a certain amount of sapphire crystals can be obtained, and these sapphire crystal materials cannot be used for the follow-up process processing procedure of the sapphire crystal rod 7, so cutting on the sapphire crystal rod The process of orientation plane produces a lot of waste of sapphire crystal
When the number of sapphire crystal rods taken out and processed in the sapphire crystal ingot 1 is larger, more secondary cutting loss will be generated, which will reduce the yield of the sapphire crystal ingot rods, and will increase the processing and use costs at the same time. The entire operation process The processing is complex, and multiple processing steps will affect the processing accuracy of the entire sapphire crystal
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[0024] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0025] As can be seen from the above analysis, in order to make the cylindrical sapphire crystal rod taken out from the sapphire crystal ingot 1 meet the requirements of the MOCVD process; The obtained orientation planes are distributed along the length direction of the sapphire crystal rod. After the sapphire ingot has an orientation plane, the corresponding sapphire wafer 7 can be obtained through corresponding process operations. And in the process of secondary cutting the sapphire crystal ingot to obtain the orientation plane, the cut sapphire crystal material cannot be used. Therefore, when a large amount of sapphire crystal ingots are processed above, a large amount of sapphire crystal ingots will be wasted, resulting in the sapphire crystal ingot 1. The rod yield is low, the cutting accuracy is low due to multiple cutting, the process operation is compl...
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The invention relates to a method for improving sapphire crystal ingot bar taking yield by utilizing a 8-shaped cutting. The comprises the following steps of: a. providing a grown sapphire crystal ingot; b. installing the sapphire crystal ingot on a machining table; c. cutting a first sapphire crystal bar in the sapphire crystal ingot during cutting, wherein first sapphire crystal bar is of a cylinder consisting of a plane and a first camber surface; and d. taking out the first sapphire crystal bar out of the sapphire crystal ingot, and forming a positioning plane corresponding to the plane of the first sapphire crystal bar in the sapphire crystal ingot; e. cutting out a second sapphire crystal bar along the positioning plane in the sapphire crystal ingot, wherein the second sapphire crystal bar is of a cylinder consisting of a positioning plane and a second camber surface; and f. taking out the second sapphire crystal bar, and carrying out next cutting on the sapphire crystal ingot. In the invention, the process operation is simple, the cutting efficiency can be improved, the machining cost can be lowered, the range of application is wide and the safety and reliability can be achieved.
Description
technical field [0001] The invention relates to a method for cutting a sapphire crystal ingot, in particular to a method for cutting a sapphire crystal ingot in a figure-eight shape to obtain rod yield, and belongs to the technical field of sapphire crystal cutting. Background technique [0002] The composition of sapphire is aluminum oxide, and the crystal structure is a hexagonal lattice structure. Because sapphire has a wide optical penetration band and has good light transmission from near ultraviolet to mid-infrared, it is widely used in optical components, infrared devices, high-strength laser lens materials and photomask materials. It has High sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point, etc. At present, the usual growth method of sapphire crystal usually adopts the Chai-type crystal pulling method or the Kjeldahl crystal growth method, and the sapphire crystal ingot structure is grown...
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IPC IPC(8): B28D5/00
Inventor 张新忠
Owner ECO POWER WUXI