High-temperature wide-frequency wave-transparent composite material and preparation method thereof
A composite material and high-temperature technology, which is applied in the field of high-temperature broadband wave-transparent composite materials and their preparation, can solve the problems of porous ceramic surface roughness, affecting the performance of wave-transmitting materials, and sensitivity to dielectric loss, etc., and achieve good bonding strength
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Embodiment 1
[0025] Weigh 200g of lithium-aluminum-silicon ceramic powder, 1g of binder methyl cellulose, 80ml of distilled water, and ball-mill it into a slurry at a ball-milling speed of 800r / min and a ball-milling time of 36h. Porous silicon nitride is selected as the matrix, and the matrix is After processing and ultrasonic cleaning, the coating is sprayed on the surface of the porous silicon nitride substrate by spraying. The pressure of the high-pressure spray gun is controlled at 0.2-0.6Mpa. After spraying, it is dried in a drying oven at 80°C for 26 hours, and then placed in a vacuum pressureless furnace for sintering at 1200°C. The heating time is 10 hours, and the temperature is kept at 1200°C for 3 hours. In this way, a broadband wave-transparent silicon nitride material is obtained.
Embodiment 2
[0027] Weigh 55g of lithium-aluminum-silicon ceramic powder, 1g of binder methyl cellulose, 20ml of distilled water, and ball mill it into a slurry. After processing and ultrasonic cleaning, the coating is sprayed on the surface of the porous silicon nitride substrate by spraying. The pressure of the high-pressure spray gun is controlled at 0.2-0.6Mpa. After spraying, it is dried in a drying oven at 60°C for 36 hours, and then placed in a vacuum pressureless furnace for sintering at 1100°C. The heating time is 12 hours, and the temperature is kept at 1100°C for 6 hours. In this way, a broadband wave-transparent silicon nitride material is obtained.
Embodiment 3
[0029] Weigh 75g of lithium-aluminum-silicon ceramic powder, 0.2g of binder methyl cellulose, 30ml of distilled water, and ball-mill it into a slurry at a ball-milling speed of 1200r / min and a ball-milling time of 24h. Porous silicon nitride is selected as the matrix, and the matrix is Processing and ultrasonic cleaning are carried out, and a coating is sprayed on the surface of the porous silicon nitride substrate by spraying. The pressure of the high-pressure spray gun is controlled at 0.2-0.6Mpa. After spraying, it is dried in a drying oven at 100°C for 24 hours, and then placed in a vacuum pressureless furnace for sintering at 1400°C. The heating time is 14 hours, and the temperature is kept at 1100°C for 2 hours. In this way, a broadband wave-transparent silicon nitride material is obtained.
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