Substrate structure and manufacturing method thereof

Abstract

The invention provides a substrate structure, comprising a first substrate and a second substrate in opposite arrangement, wherein a first surface of the first substrate faces to a second surface of the second substrate; the first surface is provided with a conductor interconnection layer and a bonding layer in sequence; and the bonding layer is used for connecting the first substrate and the conductor interconnection layer with the second substrate. According to the substrate structure and the manufacturing method thereof, the second substrate is taken as a substrate with a supporting function; the first substrate is taken as a substrate for manufacturing a device directly; and the first substrate is formed by crystal growth, so the problems of thickness and self-stress are avoided, thus avoiding the unnecessary stress, thereby improving the performances of the devices formed in the first substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a substrate structure and a manufacturing method thereof. Background technique [0002] With the continuous development of integrated circuit technology, it has also been widely used in MEMS (Micro Electromechanical System, micro-electromechanical system), power devices and circuits, etc., by combining micro-mechanical technology or other technologies with integrated circuit manufacturing processes , Fabricate micro devices, micro systems or power devices, power circuits, etc. on the substrate of semiconductor materials. [0003] Traditionally, monocrystalline silicon substrates and SOI (Silicon On Insulator, silicon-on-insulator) substrates are mostly used for fabrication of devices. [0004] For SOI substrates, the price of SOI itself is high, and the manufacturing process of micromechanical devices and circuits is more complicated than traditional processes, which will...

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Problems solved by technology

[0004] For SOI substrates, the price of SOI itself is high, and the manufacturing process of micromechanical devices and circuits is more complicated than traditional processes, which will greatly increase the cost of products

For single crystal silicon substrates, devices are mainly formed by etching polycrystalline materials and other insulating materials on the single crystal silicon substrates, but due to the defects of the polycrystalline material deposition process and the material itself, this makes Its deposition thickness is limited, which also affects the performance of the device

[0005] Specifically, the problem of forming devices on the above-mentioned monocrystalline silicon substrate is that the polycrystalline material itself deposited on the substrate has relatively large stress, which will affect the deposition thickness and device performance that can be achieved by polycrystalline silicon, especially It will affect devices that are sensitive to stress. For example, for MEMS inertial sensors or capacitive pressure sensors, they use the principle that the capacitance changes under the action of inertia or pressure after the release of the polysilicon structure. When manufacturing such sensors, the polysilicon Stress can seriously affect device performance

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